Current trends in electrification are placing increasing demands on the power electronics for improved efficiency, higher power capability and higher power density. Since these demands apply to systems, the requirements extend down to the component level. Silicon carbide (SiC) is poised to rapidly replace silicon (Si) in many applications due to the higher performance characteristics
Today, multiple silicon carbide (SiC) device suppliers update their growing product catalogs every few months. As options increase, the next challenge facing the widespread adoption of SiC is the design-in process. Using these fast-switching components requires a multifaceted, holistic solution involving the semiconductor die, package, gate driver, and the interactions of all three technologies. This
GaN transistors are increasingly used in various fields: in the automotive sector, for the supply of electrical power, and for the conversion and use of current. These components will soon replace their respective predecessors. This article takes a look at how to better manage the different operating conditions, including critical ones, in order to optimize
Today, most power supply roadmaps have GaN transistors incorporated into them as a key platform. The advantages of GaN transistors compared to Si MOSFETs, IGBTs, and SiC MOSFETs means engineers are extensively designing them into their systems. However, these advancements with GaN transistors in switching power supplies have also made characterizing the performance of these
In this system, a boost converter charges the battery in Electric Vehicles (EV). A conventional OBC (onboard charging system) has a bridge rectifier to convert the input AC voltage to DC but, during the rectification process, there is high conduction, and switching losses and heating issues are also attached to it. Interleaved topologies are
The race for power conversion efficiency over 99% continues. New innovative topologies are competing with the standard half-bridge topology using SiC and GaN semiconductor technologies. Requirements for high-efficient power conversion both unidirectional and bidirectional are getting standard in the wide field of applications ranging from EV battery chargers, solar inverters and UPS to industrial
The electric vehicle (EV) market is expected to jump from 3.2 million units in 2019 to nearly 27 million units by the year 2030. Major players in this industry are expected to invest more than $350 billion in the near future to grow the electric vehicle market. Wolfspeed understands the technological challenges that EVs present
GaN Systems offers a reference design for a 65-W quasi-resonant charger targeting consumer electronics, such as smartphones and laptops. The design addresses the consumer demand for smaller, lighter, and faster chargers by leveraging the benefits of GaN technology, including high switching speed, low on-resistance, and zero reverse recovery. The main components of the design circuit
A recently-released reference design for a GaN-based QR adaptor opens a discussion: How do quasi-resonant flyback converters work? And what are the virtues and limitations of designing a GaN-based power converter? Read More!
GaN Systems announced a new reference design for a high-power density 65W QR (quasi-resonant) charger targeted for the consumer electronics market, including mobile phone and laptop computer applications. The reference design comprises of an operating charger and design documentation – providing a complete and simple to implement solution that assists customers in accelerating product development,
