Silicon (Si)-based power electronics have long dominated the power electronics industry for their technological maturity and relative ease of accessibility. The silicon carbide (SiC) substrate, however, has gained traction of late due to its major intrinsic advantages, which align well with recent industry trends. This wide-bandgap (WBG) semiconductor can not only handle much larger energy
About SiC Schottky diodes, their advantage, a comparison between Si and SiC diodes, along with a detailed case study for an in-depth understanding of the concept Nowadays fast charging through DC is getting more popular. To get faster charge-time it is necessary to have the external power conversion and it is important that this is
A Smaller, Cooler Power Option Traditionally built with silicon transistors, server power supplies have been commodity items for decades. Gallium nitride (GaN), a material initially used in high-performance radio frequency (RF) applications such as military radars and satellites, is steadily displacing silicon in power devices of all shapes and sizes, from consumer phone chargers to
Standard silicon devices are still the majority of the power electronics market at this time. While many companies are developing new circuit topologies to improve efficiency with silicon devices, particularly with three-level topologies, new silicon carbide solutions are coming forward as a new semiconductor element to meet the high power challenges of the near future.
Design Challenges and Solutions for Solar Inverters By Andrew Smith, Product Marketing Manager, and Matthias Tauer, Technical Marketing Manager, Vincotech GmbH Renewable Energy is the key to a cleaner future and solar energy is leading the way. Designers of solar inverters face a multidimensional challenge to ensure solar power continues to meet the growing demand
Silicon carbide (SiC) is a wide bandgap semiconductor that in recent years has successfully established itself in several power applications, demonstrating superior quality compared to traditional components based on silicon technology. SiC-based power discretes offer relevant properties including high switching frequencies and operating temperatures, low conduction losses, high reliability and robustness combined with improved thermal
Electric vehicles (EVs) will gain more and more market share, eventually taking over internal combustion engine vehicles. Direct current (dc) fast charging stations will replace, or integrate, petrol stations. Renewable energies will be used to power them, such as solar and wind. People will desire to charge their EVs in less than 15 minutes and
5G is the latest-generation network that is poised to power the IoT. Networks running 5G will be up to 20× faster than the existing 4G network, enabling video download speeds up to 10× faster. High-performance power semiconductors such as gallium nitride (GaN), silicon carbide (SiC), and gallium arsenide (GaAs) are playing a key role in
Optical isolated probe for the diagnosis of cross-conduction In order to carry out the process of diagnosis of cross-conduction or potential cross-conduction, the easiest and most authentic way is to check the deadtime with the help of two probes, existing at the extreme sides (high- and low-side driving signals) simultaneously. Various challenges are associated with
GaN Systems CEO Jim Witham writes on the widening chasm between early adopter and the mainstream, and how to bridge it. Addressing the challenges that technology companies face in moving from early adopters to mainstream customers has been a topic of conversation among entrepreneurs since Geoffrey Moore wrote “Crossing the Chasm” 30 years ago. That
