This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage and power classes and gives insights in latest developments. In various applications, SiC devices are used today to achieve highly efficient and compact converters. Applications range all power ratings, from air conditioners, to battery chargers, to
The use of SiC MOSFETs has been increased in modern industrial applications due to fast switching, conduction loss, and an increase in breakdown voltage. With the ease of most rapid switching speeds and higher-frequency empowerment, the framework reduces the size and increases system efficiency. High-power SIC MOSFET modules are the acceptable substitution of Si IGBTs
The increasing popularity of GaN solutions in power electronics has prompted many companies to rethink the way they build their power systems. In the last few years, GaN has proven to be reliable and pushing the boundaries in smaller, lighter, and more efficient power systems in data centers, automobiles, consumer electronics, renewable energy systems, and
2020 ushered in a wave of GaN transistors in applications from automobiles to audio amplifiers. We talked with GaN Systems CEO Jim Witham to find out why he thinks 2021 could see even more GaN adoption. While gallium nitride (GaN) transistors were once the musings of university research projects 20 years ago, these devices are
2020 is the year of the GaN charger and the announcement we made today about the Philips multi-port 65W GaN fast charging device validates that point. This 65W charger is the next generation of Philips’ 2C1A 18W product and shows big improvements from the previous version. It’s compact and offers higher power and faster charging
Designers are finally able to extract disruptive system-level benefits of SiC technology to shrink the size, noise, and field failures of auxiliary power units (APUs) in transportation vehicles. As vehicle electrification proliferates the consumer EV segment other forms of transportation are also chasing the global macrotrend, including railway, aircraft, delivery trucks, off-highway vehicles,
In recent years, wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been receiving considerable attention. Both these compounds can sustain higher frequencies, higher voltages, and more complex electronics products than silicon. The adoption of SiC and GaN power devices is now undeniable, and questions are more related to the breadth
GaN modules meet industry-standard footprints with superior system performance. If you’re looking to investigate the benefits of GaN (gallium nitride) power semiconductors, you’re in luck: GaN Systems has debuted four new integrated power-module evaluation kits. The module kits are designed to be easy to use for evaluating performance in high-power applications such as traction
One of the key metrics when choosing a gate driver is peak current. During the process of examining various competitor datasheets, make sure peak current is compared in a like-for-like manner. One question often comes up when considering what gate driver to use for an application: What is the peak current that a driver
It is a fact that GaN transistors have increased the performance of power systems while reducing the relative cost of components. But what about quality and reliability? In an interview with EE Times, Jim Witham, CEO of GaN Systems, highlighted how the power transistor industry is familiar with the qualification guidelines in the Joint Electron
