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Hardware Available: 6.6 kW High Power Density, Bi-directional EV On-Board Charger Reference Design

2021-11-22T10:43:42-06:00November 22nd, 2021|Categories: Featured, Reference Designs, Silicon Carbide Test & Evaluation Products, Wolfspeed|

Leveraging Wolfspeed 650V C3M™ SiC MOSFETs This reference design demonstrates the application of Wolfspeed's 650V C3MTM SiC MOSFETs to create a high power density electric vehicle (EV) on-board charger (OBC). This design leverages the high frequency switching capabilities of Wolfspeed 650V C3M™ SiC MOSFETs to create a smaller, lighter and cost effective system.

In Stock: Microchip 1700V, 35mΩ SiC MOSFET in D3PAK

2021-11-17T10:04:16-06:00November 17th, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

MSC035SMA170S offers superior avalanche ruggedness FeaturesLow capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = 175 CFast and reliable body diodeSuperior avalanche ruggednessRoHS compliantBenefitsHigh efficiency to enable lighter, more compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates

Wolfspeed Webinar: Effortless System Scalability with the GM3

2021-11-15T14:30:32-06:00November 15th, 2021|Categories: Featured, Webinar, Wolfspeed|

Introducing the Latest Offering in the Wolfspeed WolfPACK Family Date: Monday, November 22, 2021Time: 9:00 am PST | 12:00 pm EST | 18:00 CETWolfspeed is pleased to introduce the newest package in the Wolfspeed WolfPACK power module family, the GM3. As the bigger brother to the FM3 package, the addition of the GM3 to Wolfspeed's

Using simulation to optimize GaN-powered designs

2021-11-15T13:40:40-06:00November 15th, 2021|Categories: Article, Featured, GaN Systems|

Comparisons of transistor device models and simulation techniques illustrate which approach works best for specific design scenarios. When designing a new system based on Gallium Nitride (GaN) power transistors, simulation provides engineers with a powerful design optimization tool. Through simulation, designers can estimate system efficiency, choose the appropriate device or topology, find suitable thermal strategies,

How Wolfspeed’s SiC Technology Benefits Grid-Tie Applications

2021-11-15T13:15:18-06:00November 15th, 2021|Categories: Featured, Richardson RFPD, White Paper, Wolfspeed|

Wolfspeed White Paper Silicon Carbide (SiC) discretes and power modules can bring huge system-level benefits to grid-tied converter applications, including higher voltage, faster switching, increased power density and current capabilities, and an overall boost in system efficiency while reducing BOM costs for passive components. This white paper highlights Wolfspeed's wide SiC portfolio suited for

New 650V GaN E-Mode Half-bridge Evaluation Board

2021-11-09T13:29:45-06:00November 9th, 2021|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

Supports high-power wireless charger, industrial and consumer applications The GS-EVB-HB-0650603B-HD from GaN Systems is a 650 V GaN E-Mode half-bridge evaluation board featuring HEY1011-L12C gate drive solution with two 650V, 60A GaN E-mode transistors in a fully-functional configuration.Features and Benefits:Smallest isolated gate drive solution in the marketSignificant size reduction (34 x 39 mm PCB)Board space

Free samples available: Vincotech 1200V, 56A SiC Module

2021-11-09T11:49:53-06:00November 9th, 2021|Categories: Featured, Silicon Carbide Power Transistors & Modules, Vincotech|

In Stock: LY12B2B027ME01 flow 2xBOOST E2 SiC Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules integrated with Wolfspeed SiC die. Contact us for samples to evaluate the quality of these modules and, potentially, overcome the challenges

Tech Chat with Microchip: Threshold Voltage and Negative Bias

2021-11-08T12:22:34-06:00November 8th, 2021|Categories: Featured, Microchip, Tech Chat, Video|

Part of our Tech Chat series In this Tech Chat, we discuss a SiC MOSFET's threshold voltage and its importance on switching loss and immunity to noise and voltage spikes.Speakers:Steven Chenetz, Discrete and Power Management Field Applications Engineer, MicrochipKirk Barton, Field Applications Engineer, Richardson RFPD MORE TECH CHAT!

Dynamic Characterization and Measurement Methods for SiC MOSFETs

2021-10-11T13:54:34-05:00October 11th, 2021|Categories: Featured, Richardson RFPD, White Paper, Wolfspeed|

Wolfspeed White Paper With increased voltage ratings, lower operating temperatures, higher-current capabilities, and better recovery characteristics, silicon carbide (SiC) has enabled  several applications to maximize efficiency and power density while keeping costs at a minimum; however, it’s important to fully characterize these components and their performance in order to take full advantage of SiC technology.Download

In Stock: 8x8mm PDFN Package GaN Transistors

2021-11-03T13:24:45-05:00November 3rd, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

Reduce the cost per watt in 45W to 150W applications The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.

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