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SiC in Stock: 1200V, 25mΩ SiC MOSFET in SOT-227 Package – Samples Available

2022-09-27T15:02:07-05:00September 27th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSC025SMA120J Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantIsolated voltage to 2500VBenefits:High efficiency to enable lighter/compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates the need of

Wolfspeed Adds AEC-Q101 Silicon Carbide MOSFETs to 650V Offering

2022-09-26T11:05:17-05:00September 26th, 2022|Categories: Featured, News, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Extends Wolfspeed’s AEC-Q101 Qualified E3M Range Wolfspeed's new automotive qualified E-Series (E3M) 650 V, 60 mΩ MOSFET family helps designers meet the demands of the EV OBC application space. Developed using the company's 3rd generation SiC MOSFET technology, the E3M0060065D and E3M0060065K devices (Figure 1) feature high blocking voltage with low ON-resistance, high-speed switching with

SiC In Stock: 1200V, 78A Baseplateless SiC Power Module in Compact, Industry-Standard Footprint

2022-09-26T11:43:37-05:00September 26th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Wolfspeed CAB016M12FM3 Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint. The family of modules provide an excellent

GaN in Stock: 650V GaN E-HEMT Evaluation Board For Half-Bridge Topology

2022-09-18T17:45:22-05:00September 18th, 2022|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

650 V GaN E-HEMT Daughter Board from GaN Systems GS66516T half bridge daughter board. Power level: 2.5kW The GS66516T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half

Wolfspeed 62mm BM3 Silicon Carbide Modules for High Frequency Industrial Applications

2022-09-18T17:04:45-05:00September 18th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

New BM3 Half-Bridge Module with Schottky Diodes Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed Silicon Carbide switching benefits and increased system efficiency, due to the low-inductance layout.

Wolfspeed Selects North Carolina for World’s Largest Silicon Carbide Materials Facility

2022-09-18T16:59:43-05:00September 18th, 2022|Categories: Featured, News, Wolfspeed|

Wolfspeed to increase Materials capacity by more than 10x Silicon Carbide Materials manufacturing facility to be located in Chatham County, strategically located near existing Durham Materials factory Company expands partnership with NC A&T to foster next generation of Silicon Carbide experts Wolfspeed recently announced it will build a new, state-of-the-art, multi-billion-dollar Materials manufacturing facility

Designing Robust Transistor Circuits with IGBTs and Silicon Carbide MOSFETs

2022-09-11T16:16:38-05:00September 11th, 2022|Categories: Featured, RECOM, White Paper|

RECOM White Paper When evaluating new switching transistors circuits, often only the transistor specifications are considered. However, a very significant contributor in the robustness of the final design is the driver circuit. This whitepaper shares some design guidelines and advice on how to reduce failure causes and simplify the design - with application examples

SiC Makes for Smarter Semi Fab/Process Power Supplies

2022-09-11T15:48:56-05:00September 11th, 2022|Categories: Article, Featured, Wolfspeed|

Technical Article Semiconductor device fabrication processes have several distinct and intricate steps. Power supplies used in semiconductor fab equipment are essential for every task at the front and back end of the process. Due to its power density, reliability, and design flexibility, engineers are seeing the benefits of using Silicon Carbide (SiC) compared with

Webinar: Build More Efficient Solar Inverters and Energy Storage Systems with SiC

2022-09-05T11:52:31-05:00September 5th, 2022|Categories: Featured, Webinar, Wolfspeed|

Wolfspeed Webinar | Monday, September 19 | 8AM PDT / 11AM EDT / 17:00 CEST Silicon Carbide MOSFETs and Schottky Diodes are revolutionizing the solar photovoltaic (PV) industry, enabling increased switching speeds and energy efficiency, resulting in smaller, lighter, lower-cost systems.This webinar will explore the fast-growing lower power 5-15 kW single and three phase PV

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