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Presentation: Analysis and Benefits of GaN in High Frequency WPT Applications

2021-07-04T17:55:13-05:00July 4th, 2021|Categories: Featured, GaN Systems, Video|

GaN Systems Workshop for IEEE Wireless Power Week 2021 There is still another cord to cut: Power. But the current low frequency wireless power transfer (WPT) technology is low power, slow charging and low efficiency – this will not advance the market. Paul Wiener presents a workshop for IEEE Wireless Power Week 2021 on the

Tech Chat with GaN Systems – Demystifying the GaN EMC Design Practice

2021-07-04T16:57:52-05:00July 4th, 2021|Categories: Featured, GaN Systems, Tech Chat, Video|

Part of our Tech Chat series Mitigating EMC in GaN power circuits does not require extra design efforts. In fact, the EMC performance and solutions of GaN are very similar to silicon MOSFETs. Learn more in this Tech Chat with GaN Systems. MORE TECH CHAT!

Webinar: Using Simulation to Maximize GaN Powered Design

2021-06-28T11:58:45-05:00June 28th, 2021|Categories: Featured, GaN Systems, Webinar|

WEBINAR: June 29nd 2021 8am PDT | 11am EDT | 4pm GMT | 5pm CET Effective simulation tools are the key to efficient system design and debugging. GaN Systems provides both device-level and system-level simulation tools to help customers achieve design success. In this webinar, GaN Systems simulation tools will be introduced in detail,

In Stock: NXP Half-bridge evaluation kit with single channel IGBT/SiC gate drive devices

2021-06-28T14:58:08-05:00June 28th, 2021|Categories: Featured, Gate Driver Evaluation Products, NXP|

FRDMGD3100HB8EVM FRDMGD3100HB8EVM is a half-bridge evaluation kit populated with two MC33GD3100 single channel IGBT/SiC MOSFET gate drive devices. The kit includes the Freedom KL25Z MCU hardware for interfacing a PC installed with SPIGen software for communication to the SPI registers on the MC33GD3100 gate drive devices in either daisy chain or standalone configuration. The GD3100

In Stock: Microchip 1200 V, 80 mOhm SiC MOSFET

2021-06-28T14:07:38-05:00June 28th, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip's MSC080SMA120B increases performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications FeaturesLow capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantBenefitsHigh efficiency to enable lighter/compact

Hitachi ABB: High-Density SiC Power Modules Meet Formula E Challenges

2021-06-28T13:35:37-05:00June 28th, 2021|Categories: Article, Featured, Hitachi ABB|

Formula E, an electric-powered race car championship that began in 2014 and is currently known as “ABB FIA Formula E Championship” after ABB sponsorship in 2018, requires fully optimized power semiconductor modules, such as the latest generation of power converters. This article, based on a presentation held at PCIM Europe Digital Days 2021 by Milad

Technical Article: New SiC module boosting the efficiency of power applications

2021-06-28T13:12:47-05:00June 28th, 2021|Categories: Article, Featured, Hitachi ABB|

LinPak is Hitachi ABB Power Grids’ semiconductor newest standard in high-power isolated modules The module was developed over the last ten years, with requirements coming from traction OEMs. It delivers in terms of having a half-bridge topology, the lowest stray inductance in its class and the highest power density. With the separation of the DC

Video: Overview of Microchip’s 30kW Vienna rectifier reference design

2021-06-20T14:22:18-05:00June 20th, 2021|Categories: Featured, Microchip, Video|

In this short video, Microchip's Jason Chiang reviews the reference design for a 30kW inverter aimed at EV charging applications that is based on silicon-carbide semiconductors. The resulting circuitry is roughly three times smaller than the equivalent silicon-based approach. The reference design operates from a 380-400-V ac input and employs a DSP chip to handle

Enabling System Upgrades with SiC Technology using Industry-Standard Baseplate-Less Packaging

2021-06-13T17:55:32-05:00June 13th, 2021|Categories: Article, Featured, Wolfspeed|

Power Systems Design (June 2021) Wolfspeed's new WolfPACK family of SiC baseplate-less power modules are versatile and scalable for quick-turn upgrades of current Si designs and reduced time to marketThe new Wolfspeed WolfPACK family of power modules fill the divide between high-current modules and discrete components, providing a simpler, more robust, and more flexible option

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