You are here:Home-Featured

Featured Article

Available Soon: Mitsubishi 600V/25A Silicon Carbide DIPIPM Evaluation Kit for 3-Phase Motor Drive Applications

2022-07-17T18:38:46-05:00July 17th, 2022|Categories: Featured, Mitsubishi, Silicon Carbide Test & Evaluation Products|

Mitsubishi US-EVA-01 EVA11-SDIP with PSF25S92F6-A The SiC DIPIPM Evaluation Kit includes the primary components of a 3-phase inverter motor drive which are necessary to evaluate the SiC DIPIPM with the user’s own controller, motor, and DC link. Additional guidance can be found in the supporting documents found in the Documents tab below. Further technical

Presentation: SiC TOLL MOSFETs Enable High Efficiency and High Power Density in 3.6kW Totem-Pole PFC

2022-07-17T17:39:36-05:00July 17th, 2022|Categories: Article, Featured, Wolfspeed|

from Wolfspeed The surface-mount TOLL is an innovative package that the industry is adopting – typically for high-current, high-power–density applications. Wolfspeed’s industrial-application–qualified 650 V SiC MOSFETs in the TOLL package are significantly smaller than other package options. Compared with the standard TO-263-7L’s footprint of 151.5 mm2 and height of 4.30 mm, the TOLL device has

30kW, 3-Phase Interleaved LLC DCDC Converter Reference Design Targets Fast Charger Applications

2022-07-17T12:29:05-05:00July 17th, 2022|Categories: Featured, Reference Designs, Silicon Carbide Test & Evaluation Products, Wolfspeed|

Download Wolfspeed CRD30DD12N-K Reference Design Wolfspeed's 30kW 3-phase interleaved LLC DCDC converter (CRD30DD12N-K) targets high-power-density, high-efficiency fast charger applications and features Wolfspeed’s discrete 1200V C3M Silicon Carbide MOSFETs (C3M0040120K) and 650V C6D Silicon Carbide Schottky Diodes (C6D20065D and C6D10065A). The reference design accommodates all different levels of EV charging with a wide output voltage range

SiC in Stock: 700V, 15mΩ SiC MOSFET in TO-247-4 Package, Superior Avalanche Ruggedness

2022-07-10T15:42:17-05:00July 10th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSC015SMA070B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low capacitances

GaN Technology in Audio Power Amplification

2022-07-10T15:00:55-05:00July 10th, 2022|Categories: Article, Featured, GaN Systems|

Technical article featuring GaN Systems In a philosophical sense, there are different levels of technology — most commonly, we think of fundamental and applied technologies. An example of the former would be the invention of transistors at Bell Labs in the 1940s. The driving force behind the fundamental advance was telecommunications, a much wider market

How Wolfspeed’s Module Portfolio Serves the Entire Power Continuum

2022-07-10T14:36:41-05:00July 10th, 2022|Categories: Article, Featured, Wolfspeed|

Technical Article Silicon Carbide (SiC) technology has shown performance improvements over traditional silicon (Si) components across the board, including lower power losses, faster switching, higher operating temperatures, greater power density, and overall higher efficiency. Wolfspeed’s upgraded portfolio of power modules can provide these advantages in industry-standard footprints with configurations that serve a variety of

SiC in Stock: 1200V, 450A SiC Half-Bridge Module, Conduction Optimized

2022-07-10T14:07:49-05:00July 10th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

from Wolfspeed Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple and cost-effective. With half the weight and volume of a standard 62 mm module, the CAB450M12XM3 maximizes power density while minimizing loop inductance and enabling simple power bussing.

GaN in Stock: 100W GaN Power Amplifier for Wireless Power Applications

2022-07-04T14:30:12-05:00July 4th, 2022|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GSWP100W-EVBPA from GaN Systems 100W Power Amplifier for Wireless Power Applications Ideal for applications in the consumer market for items such as laptop computers, recreation drones, domestic aide robots, power tools, and fast-charging of multiple smart phones. Push-Pull Class EF2 topology GaN Systems’ GS61008P 100V / 90A / 7mOhm E-HEMTs Features 6.78 MHz frequency

SiC in Stock: 1200V, 40mΩ SiC MOSFET in TO-247-4-lead package with a Source Sense

2022-07-04T14:03:15-05:00July 4th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSC040SMA120B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B4 device is a 1200 V, 40 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low

Wolfspeed 1200V & 1700V Half-Bridge SiC Modules Designed for Ultra-High Power Density

2022-07-04T13:26:53-05:00July 4th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

HM Power Module Family Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate

Go to Top