GSWP100W-EVBPA from GaN Systems 100W Power Amplifier for Wireless Power Applications Ideal for applications in the consumer market for items such as laptop computers, recreation drones, domestic aide robots, power tools, and fast-charging of multiple smart phones. Push-Pull Class EF2 topology GaN Systems’ GS61008P 100V / 90A / 7mOhm E-HEMTs Features 6.78 MHz frequency
GS-EVB-BTP-3KW-GS: Using GaN E-HEMTs This 3kW reference design demonstrates the operating principle and design considerations of a Bridgeless Totem Pole PFC circuit (BTPPFC) using GaN Systems’ GS66516B 650V GaN transistors. Description Documentation only. No hardware Continuous conduction mode (CCM) BTP PFC reference design Digital power control 90-264 Vrms Universal input 3 kW power (1.5 kW
Supports high-power wireless charger, industrial and consumer applications The GS-EVB-HB-0650603B-HD from GaN Systems is a 650 V GaN E-Mode half-bridge evaluation board featuring HEY1011-L12C gate drive solution with two 650V, 60A GaN E-mode transistors in a fully-functional configuration.Features and Benefits:Smallest isolated gate drive solution in the marketSignificant size reduction (34 x 39 mm PCB)Board space
GaN Systems GS66508P 650 V / 30 A / 50 mOhm E-HEMTs Features6.78 MHz frequencyUp to 300 W transmit output power90% peak efficiencyConfigurable: voltage mode, current mode, single ended, scalable to 1kW with component changeAccompanied by a User’s Guide that includes the evaluation board schematic, circuit description, a quick start guide and measurement results.Target Markets
Topology design takes advantage of a two-stage power conditioning system, including a boost AC/DC PFC stage, and an isolated DC/DC half-bridge LLC stage. Description and Specifications Input voltage: 90V-264Vac Output: 19Vdc, 13.2A, 250W Passes EN55023 Class B conducted and radiated EMI Meets IEC 62368-1 touch temperature requirement Includes TSD, OLP, OVP, OCP and OPP
High-Efficiency 200W Stereo Class-D Amplifier & LLC Switched Mode Power Supply w/PFC Audio Class D 2-channel 200W per channel amplifier and 400W SMPS Evaluation boards Fast switching, low Coss, and zero QRR Enhancement Mode GaN transistors enable a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent
GaN Systems Evaluation Board: GS-EVB-HBDB-IMS This 650 V Universal Motherboard is a Half Bridge configuration board with 2 Isolated gate Drivers compatible with: IMS2 & IMS3 half-bridge daughter cards of Part Numbers: GSP66508BHB-EVBIMS2 GSP66516BHB-EVBIMS2 GS-EVB-IMS3-66508B-GS GS-EVB-IMS3-66516B-GS Features and Benefits Minimized parasitic inductance for both gate driving loop and power commutation loop Isolated gate drive
GS-EVB-FB-650V150A-SP1A: 650V 150A Full-Bridge Module Driver Board This GS-EVB-FB-650V150A-SP1A is the external gate driver board for the 650V 150A Full-Bridge Module GS-EVM-FB-650V150A-SP1. Features and Benefits: Optimized and isolated gate drive Easy -3V to 6V Input Ultra-high dV/dt ruggedness 200V/ns Applications: PV Inverters Energy storage systems UPS VFD EV Chargers LEARN MORE!
GS-EVM-3PH-650V300A-SM1 from GaN Systems This GS-EVM-3PH-650V300A-SM1 evaluation module is a 650 V 300 A 3-Phase GaN power module designed to meet high robustness, high power density, and low-cost requirements of the automotive and industrial markets.FeaturesIncludes 12 GS-065-150-1-D (650V 150A E-mode Die)Industry standard form factorHigh thermal conductivity base plateOptimized isolated gate driver board availableUltra-low switching losses
3KW High Efficiency LLC Reference Design A high density, high efficiency GaN-based 3kW LLC Resonant Converter to reduce design cycles, costs and time to market for data center, telecom, and industrial switching mode power supply (SMPS) applications. This full-bridge LLC resonant converter exceeds the 80+ Titanium standard for power supply units, achieving high power density
