GS-EVB-FB-650V150A-SP1A: 650V 150A Full-Bridge Module Driver Board This GS-EVB-FB-650V150A-SP1A is the external gate driver board for the 650V 150A Full-Bridge Module GS-EVM-FB-650V150A-SP1. Features and Benefits: Optimized and isolated gate drive Easy -3V to 6V Input Ultra-high dV/dt ruggedness 200V/ns Applications: PV Inverters Energy storage systems UPS VFD EV Chargers LEARN MORE!
GS-EVM-3PH-650V300A-SM1 from GaN Systems This GS-EVM-3PH-650V300A-SM1 evaluation module is a 650 V 300 A 3-Phase GaN power module designed to meet high robustness, high power density, and low-cost requirements of the automotive and industrial markets.FeaturesIncludes 12 GS-065-150-1-D (650V 150A E-mode Die)Industry standard form factorHigh thermal conductivity base plateOptimized isolated gate driver board availableUltra-low switching losses
3KW High Efficiency LLC Reference Design A high density, high efficiency GaN-based 3kW LLC Resonant Converter to reduce design cycles, costs and time to market for data center, telecom, and industrial switching mode power supply (SMPS) applications. This full-bridge LLC resonant converter exceeds the 80+ Titanium standard for power supply units, achieving high power density
100W PFC QR USB PD Charger with 2 Type-C Ports Reference Design Note: Reference Design – Documentation Only This GaN based 100W charger reference design provides a turn-key solution for the “100W, Multiple-ports” growing demand of consumer electronics industry. It displays outstanding performance, and best-in-class features of ultra-high-power density, high efficiency, and low surface
GS-EVB-HB-61008P-ON The GS-EVB-HB-61008P-ON evaluation board consists of NCP51810 gate drive solution with two GS61008P GaN E-mode transistors in a fully-functional half bridge. It allows users to easily evaluate GaN in a robust and simplified layout with NCP51810 gate driver, for a high cost-effective solution. This evaluation board provides the utmost flexibility of GaN transistors and
Evaluation platform and associated documentation from GaN Systems GaN E-HEMT fast switching, low Coss, and zero QRR enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply designs
GS-EVB-AUD-BUNDLE1-GS: Bundle: Amp + SMPS GaN E-HEMT fast switching, low Coss, and zero Qrr enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply are optimized for sound
Utilize with any ON Semiconductor controller IC eval board The GS-EVB-HB-66508B-ON1 evaluation board consists of NCP51820 gate drive solution with two GS66508B GaN E-HEMT’s in a fully-functional Half-Bridge. It allows users to easily evaluate GaN in an ultra- small layout with NCP51280 gate driver, for a highly cost-effective solution. Applications & Benefits: AC-DC
The GS65011-EVBEZ evaluation board allows the user to evaluate GaN Systems’ EZDrive™ circuit. EZDrive™ is a low-cost, easy way to implement a GaN driving circuit using a standard MOSFET controller with integrated driver. It is adaptable to any power level, any frequency, and any LLC and PFC controller. EZDrive™ features and benefits: Low cost
SkyCurrent III™ Charging Pad Dual-mode flexibility - The dual-mode charging pad supports both AirFuel’s Magnetic Resonant (MR) and WPC’s Qi charging standard. Fully documented reference design SkyCurrentTM Receiving units: Optimized Magnetic Resonant-enabled receiving units Multiple Wireless Charging Proof Points: BluetoothTM Enabled Speaker Personal headset LED light Read More!