Evaluate GaNPX® Bottom-Cooled E-modes in High-Power Applications This horizontal Insulated Metal Substrate (IMS3) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-modes in high power applications. The optimized thermal and electrical designs provide an excellent reference for implementing a low cost, high performance design.CompatibilityGS-EVB-HBDB-IMS – 650

650 V GaN E-HEMT Daughter Board from GaN Systems GS66516T half bridge daughter board. Power level: 2.5kW The GS66516T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half

GS-EVM-CHG-140WPFCQR-GS1 GaN Systems has introduced a new turnkey 140W AC/DC charger reference design with USB PD3.1, Single Port Type-C Output. Compared to silicon-based chargers, this design is 40% lighter and 50% smaller, featuring an ultra-high-power density of 23W/in3. This design enhances GaN Systems’ portfolio (65W, 100W, 140W, 250W) of turnkey charger solutions for the

GSWP100W-EVBPA from GaN Systems 100W Power Amplifier for Wireless Power Applications Ideal for applications in the consumer market for items such as laptop computers, recreation drones, domestic aide robots, power tools, and fast-charging of multiple smart phones. Push-Pull Class EF2 topology GaN Systems’ GS61008P 100V / 90A / 7mOhm E-HEMTs Features 6.78 MHz frequency

GS-EVB-BTP-3KW-GS: Using GaN E-HEMTs This 3kW reference design demonstrates the operating principle and design considerations of a Bridgeless Totem Pole PFC circuit (BTPPFC) using GaN Systems’ GS66516B 650V GaN transistors. Description Documentation only. No hardware Continuous conduction mode (CCM) BTP PFC reference design Digital power control 90-264 Vrms Universal input 3 kW power (1.5 kW

Supports high-power wireless charger, industrial and consumer applications The GS-EVB-HB-0650603B-HD from GaN Systems is a 650 V GaN E-Mode half-bridge evaluation board featuring HEY1011-L12C gate drive solution with two 650V, 60A GaN E-mode transistors in a fully-functional configuration.Features and Benefits:Smallest isolated gate drive solution in the marketSignificant size reduction (34 x 39 mm PCB)Board space

GaN Systems GS66508P 650 V / 30 A / 50 mOhm E-HEMTs Features6.78 MHz frequencyUp to 300 W transmit output power90% peak efficiencyConfigurable: voltage mode, current mode, single ended, scalable to 1kW with component changeAccompanied by a User’s Guide that includes the evaluation board schematic, circuit description, a quick start guide and measurement results.Target Markets

Topology design takes advantage of a two-stage power conditioning system, including a boost AC/DC PFC stage, and an isolated DC/DC half-bridge LLC stage. Description and Specifications Input voltage: 90V-264Vac Output: 19Vdc, 13.2A, 250W Passes EN55023 Class B conducted and radiated EMI Meets IEC 62368-1 touch temperature requirement Includes TSD, OLP, OVP, OCP and OPP

High-Efficiency 200W Stereo Class-D Amplifier & LLC Switched Mode Power Supply w/PFC Audio Class D 2-channel 200W per channel amplifier and 400W SMPS Evaluation boards Fast switching, low Coss, and zero QRR Enhancement Mode GaN transistors enable a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent

GaN Systems Evaluation Board: GS-EVB-HBDB-IMS This 650 V Universal Motherboard is a Half Bridge configuration board with 2 Isolated gate Drivers compatible with: IMS2 & IMS3 half-bridge daughter cards of Part Numbers: GSP66508BHB-EVBIMS2 GSP66516BHB-EVBIMS2 GS-EVB-IMS3-66508B-GS GS-EVB-IMS3-66516B-GS Features and Benefits Minimized parasitic inductance for both gate driving loop and power commutation loop Isolated gate drive