GaN Systems 650 V Automotive E-Mode GaN Transistor

2022-04-05T15:00:22-05:00April 5th, 2022|Categories: Featured, GaN Power Transistors, GaN Systems|

GS-065-060-5-B-A The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX®

New! GaN Systems’ Gen2 650V GaNPX® Packaging Power Transistors

2022-03-22T14:10:38-05:00March 22nd, 2022|Categories: Featured, GaN Power Transistors, GaN Systems|

with Improved Robustness and Cost Performance The new GaN transistors GS-065-060-3-B/T, available from Richardson RFPD, provide low RDS(on) (25 mΩ) and feature a 60A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield. Offered in GaNPX® package, GS-065-060-3-B/T feature an updated design... LEARN MORE

GaN in Stock: 650 V, 60 A Enhancement Mode GaN Power Transistor

2022-03-14T16:20:55-05:00March 14th, 2022|Categories: Featured, GaN Power Transistors, GaN Systems|

Leverage the Benefits Over Silicon The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal

GaN in Stock: GaN Systems 650V, 30A, 50mΩ Power Transistor

2022-04-07T17:26:01-05:00February 1st, 2022|Categories: Featured, GaN Power Transistors, GaN Systems|

GS66508T: for demanding high power applications The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance & low thermal resistance

GaN in Stock: GaN Systems 650V, 60A, 25mΩ Power Transistor

2021-12-15T12:03:33-06:00December 15th, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

GS66516T: for demanding high power applications The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a

In Stock: 8x8mm PDFN Package GaN Transistors

2021-11-03T13:24:45-05:00November 3rd, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

Reduce the cost per watt in 45W to 150W applications The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.

New: GaN Systems 650V GS-065-030-2-L

2021-10-06T11:40:20-05:00October 6th, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

Enables designers to leverage low-cost GaN in applications up to 3kW The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3000W power level. This new part adds to the GaN Systems family of low-cost GaN transistors that empowers designers

GaN Systems 650 V, 150 mOhm GaN Power Transistor in PDFN Package

2021-09-29T11:05:42-05:00September 29th, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

650V Enhancement Mode GaN Transistor The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side

650V Automotive Grade E-Mode GaN-on-Si Transistor + Data Downloads

2021-08-06T14:17:12-05:00July 20th, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

GaN Systems' GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to prove its transistors lifetimes exceed market requirements. The new GaN transistor provides low RDS(on) (25 mOhm) and features a 60A IDS rating and

GaN Systems Expands Automotive Product Line

2021-06-09T11:07:23-05:00June 9th, 2021|Categories: Featured, GaN Power Transistors, GaN Systems, News|

GaN Systems, the global leader in GaN power semiconductors, recently announced the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The high frequency properties of GaN combined with GaN Systems’

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