GS-065-060-5-B-A The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX®
with Improved Robustness and Cost Performance The new GaN transistors GS-065-060-3-B/T, available from Richardson RFPD, provide low RDS(on) (25 mΩ) and feature a 60A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield. Offered in GaNPX® package, GS-065-060-3-B/T feature an updated design... LEARN MORE
Leverage the Benefits Over Silicon The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal
GS66508T: for demanding high power applications The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance & low thermal resistance
GS66516T: for demanding high power applications The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a
Reduce the cost per watt in 45W to 150W applications The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.
Enables designers to leverage low-cost GaN in applications up to 3kW The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3000W power level. This new part adds to the GaN Systems family of low-cost GaN transistors that empowers designers
650V Enhancement Mode GaN Transistor The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side
GaN Systems' GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to prove its transistors lifetimes exceed market requirements. The new GaN transistor provides low RDS(on) (25 mOhm) and features a 60A IDS rating and
GaN Systems, the global leader in GaN power semiconductors, recently announced the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The high frequency properties of GaN combined with GaN Systems’
