The New GaN-Powered Wall Charger Delivers Breakthroughs in Power Efficiency, Charging Speeds, and Sustainability GaN Systems recently announced that HARMAN’s new InfinityLab InstantCharger 100W, 4 USB GaN charger leverages the high-performance advantages of GaN Systems’ transistors. With GaN Systems’ GS-065-011-1-L power transistor, the charger, made from 90% recycled plastics, harnesses the power of GaN
GS-065-018-2-L: Features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, has introduced a new transistor in the industry’s broadest portfolio of GaN power transistors. The GS-065-018-2-L expands the company’s high-performance, low-cost transistor portfolio and features lower on-resistance, increased
GS-065-060-5-T-A-MR: Offers very low junction-to-case thermal resistance The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology and GaNPX packaging. Island Technology cell layout realizes high-current
GS-065-060-5-B-A The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX®
with Improved Robustness and Cost Performance The new GaN transistors GS-065-060-3-B/T, available from Richardson RFPD, provide low RDS(on) (25 mΩ) and feature a 60A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield. Offered in GaNPX® package, GS-065-060-3-B/T feature an updated design... LEARN MORE
Leverage the Benefits Over Silicon The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal
GS66508T: for demanding high power applications The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance & low thermal resistance
GS66516T: for demanding high power applications The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a
Reduce the cost per watt in 45W to 150W applications The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.
Enables designers to leverage low-cost GaN in applications up to 3kW The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3000W power level. This new part adds to the GaN Systems family of low-cost GaN transistors that empowers designers
