Enables designers to leverage low-cost GaN in applications up to 3kW The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3000W power level. This new part adds to the GaN Systems family of low-cost GaN transistors that empowers designers
650V Enhancement Mode GaN Transistor The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side
GaN Systems' GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to prove its transistors lifetimes exceed market requirements. The new GaN transistor provides low RDS(on) (25 mOhm) and features a 60A IDS rating and
GaN Systems, the global leader in GaN power semiconductors, recently announced the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The high frequency properties of GaN combined with GaN Systems’
At Power Conference 2019, GaN Systems presented "Transforming the World with Smaller, Lower Cost, More Efficient Power Electronics," featuring: GaN Systems' product portfolio of GaN power transistors The growth in consumer, enterprise, renewable energy, industrial and EV markets A range of evaluation boards Overview of how customers in multiple applications are reaping the benefits
The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.
The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature: Industry standard 5 mm x 6 mm PDFN packages Assembly using standard SMT process Scalable: 3.5 A to 11 A in the same footprint Fast, clean switching speed High switching frequency (20 MHz+) Low switching losses
The GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-010-120-1-P is a