At Power Conference 2019, GaN Systems presented "Transforming the World with Smaller, Lower Cost, More Efficient Power Electronics," featuring: GaN Systems' product portfolio of GaN power transistors The growth in consumer, enterprise, renewable energy, industrial and EV markets A range of evaluation boards Overview of how customers in multiple applications are reaping the benefits
The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.
The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature: Industry standard 5 mm x 6 mm PDFN packages Assembly using standard SMT process Scalable: 3.5 A to 11 A in the same footprint Fast, clean switching speed High switching frequency (20 MHz+) Low switching losses
The GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-010-120-1-P is a
