GSWP100W-EVBPA from GaN Systems 100W Power Amplifier for Wireless Power Applications Ideal for applications in the consumer market for items such as laptop computers, recreation drones, domestic aide robots, power tools, and fast-charging of multiple smart phones. Push-Pull Class EF2 topology GaN Systems’ GS61008P 100V / 90A / 7mOhm E-HEMTs Features 6.78 MHz frequency
GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications
GS-065-018-2-L: Features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, has introduced a new transistor in the industry’s broadest portfolio of GaN power transistors. The GS-065-018-2-L expands the company’s high-performance, low-cost transistor portfolio and features lower on-resistance, increased
GS-065-060-5-T-A-MR: Offers very low junction-to-case thermal resistance The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology and GaNPX packaging. Island Technology cell layout realizes high-current
This GaN Systems application note shows why GaN HEMTs are simple to drive. (March 2022 updated version.) DOWNLOAD NOW!
WEBINAR: June 21th 2022 8am PST | 4pm GMT | 5pm CET In This Webinar You’ll Learn: The Economic and Sustainability value of GaN in Power Supply Units GaN’s technical advantages in Power Factor Correction and LLC Resonant Converter topologies How to take advantage of GaN Systems’ Next Generation Power Stages in 3 key
RICHARDSON RFPD HIGHLIGHTS AT PCIM EUROPE 2022 If you’re traveling to the PCIM Europe in Nuremberg May 10-12, be sure to visit the Richardson RFPD stand (Hall 6, Stand 434). Discuss the latest in gallium nitride and silicon carbide from the industry’s leading names with our engineering team, as well as the gate driver, passive
GS-EVB-BTP-3KW-GS: Using GaN E-HEMTs This 3kW reference design demonstrates the operating principle and design considerations of a Bridgeless Totem Pole PFC circuit (BTPPFC) using GaN Systems’ GS66516B 650V GaN transistors. Description Documentation only. No hardware Continuous conduction mode (CCM) BTP PFC reference design Digital power control 90-264 Vrms Universal input 3 kW power (1.5 kW
Schedule a meeting! Visit Richardson RFPD at Hall 6, Stand 434 to learn about the latest in GaN & SiC technologies from the industry's leading names, including:GaN SystemsDiscover how Gallium Nitride can help you differentiate your products in the areas of consumer, renewable energy, transportation, data center and industrial power supply applicationsLearn how to different
Part of our Tech Chat series Discover how GaN can help you achieve near perfect sonic reproduction in your Class D audio amplifier design in this Tech Chat with GaN Systems Worldwide Application Engineering Director Lucas Lu. MORE TECH CHAT!
GS-065-060-5-B-A The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX®