REFERENCE DESIGN: GS-EVB-AUD-AMP12V-GS 12V High-Efficiency Class D Audio Reference Designs These reference designs are intended to operate with or independent of the GaN Systems reference design bundle kit GS-EVB-AUD-BUNDLE1-GS to accommodate a Single-Rail Power Supply configuration. This reference design, GS-EVB-AUD-AMP12V-GS supports both a ‘direct’ +12V to +18V Single-Rail Power Supply, and a ‘boosted’ +12V
WEBINAR: Wednesday August 12 2020 6-7 pm Pacific Time Hosted by: Paul Wiener, VP of Strategic Marketing at GaN Systems This webinar covers how GaN power semiconductors have become the power solution of choice for wired power applications and how GaN can do the same for wireless power applications. Advances in GaN transistors and
The demand for more efficient and flexible recharging solutions is constantly increasing, especially aiming at leading the next generation of robotic systems towards greater autonomy.There are large companies with big plans to offer services based on drone fleets, and they are all eager to get beyond a significant operating challenge: the flight time of commercial
GaN Systems and BrightLoop Converters announced their strategic partnership to develop the latest AC/DC and DC/DC Converter products for electric motorsport and aerospace applications. Leveraging GaN Systems’ 650V GaN transistors, BrightLoop produces a range of converters that are smaller, lighter, and more efficient than currently available in the market. Read More!
GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching frequency
For EVs, the semiconductors used in traction inverters have a significant impact on efficiency, power density, and cooling requirements. The three-phase AC motors used in today’s EVs run at voltages up to 1,000V and switching frequencies up to 20 kHz. This is very close to the operational limits of the silicon-based metal-oxide semiconductor field-effect
With silicon nearing its physical limits, electronics manufacturers are turning to non-traditional semiconducting materials, notably wide-bandgap (WBG) semiconductors. Some are adopting these technologies to hit cost and performance targets that otherwise can’t be reached, and while others seek to differentiate their products from their competitors’. Larry Spaziani, vice president of sales and marketing at
This GaN Systems application note shows why GaN HEMTs are simple to drive. DOWNLOAD NOW!
As engineers within the design community read and learn about new products and topologies, they become skeptical about the promises for improved operating characteristics. The promise of a step-function improvement with GaN in audio systems could be classified as one of these scenarios. However, with the GaN Systems Stereo Class-D Amplifier system solution,
Join Richardson RFPD at PowerUp Expo, a virtual conference and exhibition focusing on power electronics. Richardson RFPD will be highlighting the latest GaN and SiC evaluation platforms and reference designs from industry-leading suppliers Analog Devices, GaN Systems, Microchip, Wolfspeed, Vincotech and more to help speed your time to market integrating these innovative technologies. Visit