GaN Systems, the global leader in GaN power semiconductors, recently announced the expansion of its family of automotive-grade 650V transistors. The GS-065-060-5-B-A is a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC converters. The high frequency properties of GaN combined with GaN Systems’
Part of our Tech Chat series Just how easy is it to characterize the junction temperature of GaN Systems devices? In this Tech Chat, temperature measurement using Long-wave Infrared (LWIR) cameras is discussed. MORE TECH CHAT!
A Smaller, Cooler Power Option Traditionally built with silicon transistors, server power supplies have been commodity items for decades. Gallium nitride (GaN), a material initially used in high-performance radio frequency (RF) applications such as military radars and satellites, is steadily displacing silicon in power devices of all shapes and sizes, from consumer phone chargers to
3KW High Efficiency LLC Reference Design A high density, high efficiency GaN-based 3kW LLC Resonant Converter to reduce design cycles, costs and time to market for data center, telecom, and industrial switching mode power supply (SMPS) applications. This full-bridge LLC resonant converter exceeds the 80+ Titanium standard for power supply units, achieving high power density
GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, recently introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications...
Part of our Tech Chat series GaN Systems’ Enhancement-Mode Gallium Nitride (GaN) technology is often compared to other GaN technologies, such as cascode. In this Tech Chat, we discuss how GaN Systems differentiates itself from other normally off GaN technologies to achieve lower losses, simplified use at higher power levels and proven reliability.
This Wolfspeed paper presents a SiC MOSFET-based 6.6 kW bi-directional Electric Vehicle (EV) on-board charger (OBC), with high efficiency and high power density. A digital controlled prototype with a switching frequency of 67kHz for CCM totem pole PFC, and 150kHz-300kHz for a CLLC resonant converter is demonstrated with 54W/in3 power density exceeding 96.5% in peak
100W PFC QR USB PD Charger with 2 Type-C Ports Reference Design Note: Reference Design – Documentation Only This GaN based 100W charger reference design provides a turn-key solution for the “100W, Multiple-ports” growing demand of consumer electronics industry. It displays outstanding performance, and best-in-class features of ultra-high-power density, high efficiency, and low surface
In this webinar, GaN Systems reviews practical system designs with GaN, demonstrating EMI, surge, thermal, and drive circuit performance. Examples illustrate that proper system design meets desired system requirements.In this webinar, you'll learn:EMI and high frequency are compatible; solution designs and application examples providedSurge requirements and standards reviewed with GaN design examplesThermal solutions reviewed for
GaN Systems CEO Jim Witham writes on the widening chasm between early adopter and the mainstream, and how to bridge it. Addressing the challenges that technology companies face in moving from early adopters to mainstream customers has been a topic of conversation among entrepreneurs since Geoffrey Moore wrote “Crossing the Chasm” 30 years ago. That