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New High-Power IMS3 Evaluation Platform from GaN Systems

2022-10-02T17:48:27-05:00October 2nd, 2022|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

Evaluate GaNPX® Bottom-Cooled E-modes in High-Power Applications This horizontal Insulated Metal Substrate (IMS3) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-modes in high power applications. The optimized thermal and electrical designs provide an excellent reference for implementing a low cost, high performance design.CompatibilityGS-EVB-HBDB-IMS – 650

GaN in Stock: 650V GaN E-HEMT Evaluation Board For Half-Bridge Topology

2022-09-18T17:45:22-05:00September 18th, 2022|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

650 V GaN E-HEMT Daughter Board from GaN Systems GS66516T half bridge daughter board. Power level: 2.5kW The GS66516T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half

GaN Systems Introduces High-Power Density & Cost Effective 140W Charger Reference Design

2022-08-29T15:04:47-05:00August 29th, 2022|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GS-EVM-CHG-140WPFCQR-GS1 GaN Systems has introduced a new turnkey 140W AC/DC charger reference design with USB PD3.1, Single Port Type-C Output. Compared to silicon-based chargers, this design is 40% lighter and 50% smaller, featuring an ultra-high-power density of 23W/in3. This design enhances GaN Systems’ portfolio (65W, 100W, 140W, 250W) of turnkey charger solutions for the

eBook: Creating a Technology Legacy

2022-08-21T17:12:27-05:00August 21st, 2022|Categories: eBook, Featured, GaN Systems|

GaN Systems’ Firsts in the Power Semiconductor Industry What does it mean to lead in an industry? And when do technology ‘firsts’ matter in demonstrating leadership that enables others in the industry – partners and customers – to succeed?These are important questions in industries that have recently moved from trials with early adopters – to

HARMAN Delivers Fast-Charging, Pocket-Sized 4-Port 100W GaN Charger Powered by GaN Systems

2022-08-01T17:25:06-05:00August 1st, 2022|Categories: Featured, GaN Power Transistors, GaN Systems, News|

The New GaN-Powered Wall Charger Delivers Breakthroughs in Power Efficiency, Charging Speeds, and Sustainability GaN Systems recently announced that HARMAN’s new InfinityLab InstantCharger 100W, 4 USB GaN charger leverages the high-performance advantages of GaN Systems’ transistors. With GaN Systems’ GS-065-011-1-L power transistor, the charger, made from 90% recycled plastics, harnesses the power of GaN

GaN Technology in Audio Power Amplification

2022-07-10T15:00:55-05:00July 10th, 2022|Categories: Article, Featured, GaN Systems|

Technical article featuring GaN Systems In a philosophical sense, there are different levels of technology — most commonly, we think of fundamental and applied technologies. An example of the former would be the invention of transistors at Bell Labs in the 1940s. The driving force behind the fundamental advance was telecommunications, a much wider market

GaN in Stock: 100W GaN Power Amplifier for Wireless Power Applications

2022-07-04T14:30:12-05:00July 4th, 2022|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GSWP100W-EVBPA from GaN Systems 100W Power Amplifier for Wireless Power Applications Ideal for applications in the consumer market for items such as laptop computers, recreation drones, domestic aide robots, power tools, and fast-charging of multiple smart phones. Push-Pull Class EF2 topology GaN Systems’ GS61008P 100V / 90A / 7mOhm E-HEMTs Features 6.78 MHz frequency

GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications

2022-06-26T13:29:45-05:00June 26th, 2022|Categories: Featured, GaN Power Transistors, GaN Systems, News|

GS-065-018-2-L: Features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, has introduced a new transistor in the industry’s broadest portfolio of GaN power transistors. The GS-065-018-2-L expands the company’s high-performance, low-cost transistor portfolio and features lower on-resistance, increased

GaN in Stock: Automotive-grade 650 V, 25 mΩ GaN E-HEMT

2022-06-21T14:42:22-05:00June 21st, 2022|Categories: Featured, GaN Power Transistors, GaN Systems|

GS-065-060-5-T-A-MR: Offers very low junction-to-case thermal resistance The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology and GaNPX packaging. Island Technology cell layout realizes high-current

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