Microchip Technology has announced a new, production-ready 1,200-V digital gate driver that provides multiple levels of control and protection. Microchip Technology has announced a new, production-ready 1,200-V digital gate driver that provides multiple levels of control and protection. The new device complements Microchip’s broad portfolio of discrete products and silicon carbide MOSFET modules to reduce
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental conditions while maximizing efficiency To complement its broad portfolio of silicon carbide MOSFET discrete and module products, Microchip recently announced a new 1200V production-ready digital gate driver, providing system developers with multiple levels of control and protection for safe,
Increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness
Part of our Tech Chat series What is avalanche and why does it occur? How does it affect reliability of a device? Why and how does Microchip emphasize avalanche testing in its SiC MOSFETs to enhance reliability? All questions are answered in this Tech Chat. MORE TECH CHAT!
for 1.2kV and 1.7kV 62MM, D3, SP6 SiC modules The 62mm Electrical Master is a 2-Channel Gate Driver Board for 1.2kV and 1.7kV 62MM, D3, SP6 SiC modules. These Plug and Play Gate Driver Boards feature Augmented Switching™ control, robust short circuit protection and are fully software configurable. Optimized for Heavy Duty Vehicle, Auxiliary Power
Microchip’s SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment. Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max)
In the race to reduce emissions in aerospace systems, designers are increasingly moving towards more efficient electronics in control systems, including those that replace pneumatics and hydraulics–everything from onboard alternators to actuators and auxiliary power units. Microchip Technology, working with European Commission consortium member Clean Sky, has developed a family of SiC-based power modules for
Microchip MSCSM120AM027CD3AG Features:SiC Power MOSFETLow RDS(on)High temperature performanceSilicon carbide (SiC) Schottky diodeZero reverse recoveryZero forward recoveryTemperature-independent switching behaviorPositive temperature coefficient on VFKelvin source for easy driveHigh level of integrationAluminum nitride (AlN) substrate for improved thermal performanceM6 power connectorsBenefits:High efficiency converterStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS compliantApplications:Welding convertersSwitched mode
Augmented Switching™ Accelerated Development Kit, Digital Programmable Gate Drivers Unlock the Full Potential of SiC Microchip’s Accelerated Silicon Carbide Development Kit includes the hardware and software elements required to rapidly optimize the performance of SiC modules and systems. This new tool enables designers to adjust system performance through software upgrades using the AgileSwitch® Intelligent
Beyond the Datasheet - Technical Article Trains are subject to a variety of weather systems that may influence the electronics used within. It is therefore important for transportation system developers to consider parameters that are not typically presented in datasheets. This is even more important in the case of wide bandgap power electronics, such
