In Stock: Microchip 1200 V, 80 mOhm SiC MOSFET

2021-06-28T14:07:38-05:00June 28th, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip's MSC080SMA120B increases performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications FeaturesLow capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantBenefitsHigh efficiency to enable lighter/compact

Video: Overview of Microchip’s 30kW Vienna rectifier reference design

2021-06-20T14:22:18-05:00June 20th, 2021|Categories: Featured, Microchip, Video|

In this short video, Microchip's Jason Chiang reviews the reference design for a 30kW inverter aimed at EV charging applications that is based on silicon-carbide semiconductors. The resulting circuitry is roughly three times smaller than the equivalent silicon-based approach. The reference design operates from a 380-400-V ac input and employs a DSP chip to handle

In Stock – Microchip MSC025SMA120B4

2021-07-20T14:08:34-05:00June 12th, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features:Low capacitances and low gate

AgileSwitch® HPM Fiber Master IGBT Gate Driver Board – 3.3kV

2021-05-14T10:35:54-05:00May 12th, 2021|Categories: Featured, Gate Drivers, Microchip|

The Microchip HPFM-00117 is a single-channel, plug-and-play gate driver board for 1.2-3.3kV high-power modules such as IHV, IHM, HiPAK™ and others. Optimized for high-speed trains and mass transit, induction welding, solar/PR, industrial drives, induction heating and wireless charging applications, these gate drivers are UL compliant for modules rated up to 3.3kV. They feature 7W output

Microchip Webinar On-demand: Making a Safe, Intelligent Switch to SiC

2021-03-29T11:25:51-05:00March 29th, 2021|Categories: Featured, Microchip, Webinar|

Orlando Esparza hosts subject matter experts Steven Chenetz and Avi Kashyap to discuss Silicon Carbide as an emerging technology and to demonstrate the Intelligent Configuration Tool’s capabilities. Microchip provides unrivaled SiC MOSFET avalanche and short circuit ruggedness, alongside total system solutions designed to streamline your SiC development – from benchtop to production. Only Microchip unifies

Microchip SiC Companion Solutions

2021-03-02T12:52:03-06:00March 2nd, 2021|Categories: Brochures, Featured, Microchip|

Next generation SiC MOSFETs offer superior dynamic and thermal performance over conventional Si MOSFETs and IGBTs. These devices offer low capacitance and gate charge, fast switching speed, fast and reliable body diode and stable operation at high junction temperatures of 175 deg C. These features enable high efficiency with low switching and conduction losses and

Videos: Walk Around the Block – EV Fast Charging

2021-02-02T10:53:08-06:00February 2nd, 2021|Categories: Analog Devices, Featured, Microchip, Richardson RFPD, u-blox, Video, Wolfspeed|

The "Walk Around the Block" webinar series addresses design challenges and trending topics relative to power electronics applications. In this series, we'll focus on EV fast charging and highlight a variety of topics from our vendors: Wolfspeed: On-board chargers u-blox: Wireless communications Analog Devices: Optimize switching Microchip Technology Inc.: Power factor correction Each session

Microchip Next Generation 700V SiC MOSFETs – Request Samples

2021-01-25T14:42:05-06:00January 25th, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Features include: Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness LEARN MORE

Characterization of a 62mm SiC Power Module with AgileSwitch Augmented Switching Gate Drivers

2021-01-13T17:00:22-06:00January 13th, 2021|Categories: Application Note, Featured, Microchip|

Switching a SiC MOSFET Power Module creates two significant problems that need to be addressed in order to optimize the performance of the device: turn-off voltage overshoot and ringing. These two parasitic problems need to be controlled while maintaining efficient switching. Microchip's AgileSwitch® line of patented Gate Drive products address these problems, controlling the turn-off

Video: Reducing Size, Noise & Field Failures of Transportation Auxiliary Power Units (APUs)

2021-01-05T16:33:27-06:00January 5th, 2021|Categories: Featured, Microchip, Video|

This Microchip presentation covers: About Transportation APUs Why SiC for APUs? Microchip Up to the Task SiC MOSFET toughness Ultra-low inductance power package Intelligent digital gate driver The SiC APU Solution: ASDAK+

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