Microchip MSC025SMA120J Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantIsolated voltage to 2500VBenefits:High efficiency to enable lighter/compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates the need of

Microchip MSCSM120AM03CT6LIAG Features:Phase LegVDSS (V): 1200RDSon (mR) typ: 2.5Current (A) Tc=80C: 641Silicon Type: SiC MOSFETPackage: SP6C LIBenefits:High efficiency converterOutstanding performance at high-frequency operationDirect mounting to heatsink (isolated package)Low junction-to-case thermal resistanceLow profileRoHS compliantApplications:Welding convertersSwitched mode power suppliesUninterruptible Power SuppliesEV motor and traction drive LEARN MORE / ORDER ASK AN EXPERT

Microchip MSC750SMA170B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense. Features: Low capacitances and

Microchip MSC090SMA070B The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. Features: Low capacitances and low gate charge Fast

Microchip MSC015SMA070B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low capacitances

Microchip MSC040SMA120B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B4 device is a 1200 V, 40 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low

Microchip MSCSM170AM058CD3AG The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin emitter for easy drive High level of integration M6