from Mersen + Microchip The “electrification of everything” is driving the need for higher levels of power fidelity. Designers of electric vehicles, commercial transportation, renewable energy, and energy storage systems can benefit from silicon carbide stack solutions that drive performance and cost efficiencies and accelerate time to market by up to six months. Benefits
Microchip MSC025SMA120J Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantIsolated voltage to 2500VBenefits:High efficiency to enable lighter/compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates the need of
When compared to silicon IGBTs, SiC MOSFETs can reduce switching losses by over 70 percent. Learn more about Microchip’s broad portfolio of SiC devices, including MOSFETs, diodes, gate drivers and our new, industry-leading, 3.3 kV SiC MOSFET.
Microchip MSCSM120AM03CT6LIAG Features:Phase LegVDSS (V): 1200RDSon (mR) typ: 2.5Current (A) Tc=80C: 641Silicon Type: SiC MOSFETPackage: SP6C LIBenefits:High efficiency converterOutstanding performance at high-frequency operationDirect mounting to heatsink (isolated package)Low junction-to-case thermal resistanceLow profileRoHS compliantApplications:Welding convertersSwitched mode power suppliesUninterruptible Power SuppliesEV motor and traction drive LEARN MORE / ORDER ASK AN EXPERT
Microchip MSC750SMA170B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense. Features: Low capacitances and
This application note provides design guidance for properly selecting gate-source voltages for Microchip’s SiC MOSFET products, along with related device performance and behavior. This note applies to Microchip part numbers of the type MSCXXXSMAXXX. DOWNLOAD NOW
Microchip MSC090SMA070B The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. Features: Low capacitances and low gate charge Fast
Microchip MSC015SMA070B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low capacitances
Microchip MSC040SMA120B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B4 device is a 1200 V, 40 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low
Microchip MSCSM170AM058CD3AG The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin emitter for easy drive High level of integration M6
