The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package. Features:Low capacitances and low gate chargeFast switching speed due to
Microsemi SiC Schottky diode modules offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs. Features include: Essentially zero forward and reverse recovery = reduced switch and diode switching losses Temperature independent switching behavior = stable high temperature performance Positive temperature coefficient of VF = ease of parallel operation
Features include:Low capacitances and low gate chargeFast switching speed due to low internal gage resistance (ESR)Stable operation at high junction temperature at 175 degrees CelsiusFast and reliable body diodeSuperior avalanche ruggedness LEARN MORE
The MSCSICPFC/REF5 is a three-phase Vienna PFC reference design for hybrid electric vehicle (HEV)/electric vehicle (EV) charger and high power switch mode power supply applications. This reference design achieves 98.5% efficiency at 20 kW output power and is capable of operation to 30 kW. Key features of this three-phase Vienna rectifier reference design: Initial
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form
Typically, one board level heat sink is used to increase the surface area available for heat transfer from an individual low- to medium-power semiconductor device, thus reducing the temperature of both its external case and its internal junction. The add-on heat sink allows the semiconductor device to perform at or near its highest level,
The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. Part # Voltage (V) Current (A) Configuration Package MSC010SDA070K 700 10 Single TO-220 MSC010SDA120B 1200 10 Single TO-247-2 MSC010SDA120K 1200 10 Single TO-220
High power evaluation board, up to 1200V & 50A @ 200kHz switching frequency featuring the combo ADI ADuM4135 isolated gate driver + LT3999 isolated power supply controller + Microsemi SiC power module in half bridge configuration. Half Bridge Topology with SiC APTMC120AM20CT1AG Power Device 1200 V, 50 A, 200 kHz >100 kV/us CMTI 12
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor,
Microsemi SiC products brochure (order your printed copies or download a .pdf version. Includes info on Microsemi’s next gen SiC diodes and MOSFETs.
