Silicon Carbide for the Next High-Voltage Applications in EVs

2021-05-11T13:35:10-05:00May 11th, 2021|Categories: Article, Featured, Mitsubishi|

Standard silicon devices are still the majority of the power electronics market at this time. While many companies are developing new circuit topologies to improve efficiency with silicon devices, particularly with three-level topologies, new silicon carbide solutions are coming forward as a new semiconductor element to meet the high power challenges of the near future.

Highly Efficient SiC Power Devices for a Wide Range of Applications

2021-01-26T11:38:33-06:00January 26th, 2021|Categories: Article, Featured, Mitsubishi|

This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage and power classes and gives insights in latest developments. In various applications, SiC devices are used today to achieve highly efficient and compact converters. Applications range all power ratings, from air conditioners, to battery chargers, to

Performance Comparison of State-of-the-Art 300 A/1700 V Si IGBT and SiC MOSFET Power Modules

2020-11-11T13:20:26-06:00November 11th, 2020|Categories: Article, Featured, Mitsubishi|

Recently, Mitsubishi Electric began the rollout of second generation silicon carbide (SiC) technology in 1200 V and 1700 V class power modules. These new modules provide greater efficiency and higher power density than previous SiC generations as well as the latest silicon (Si) technology, which enables new capabilities in energy, transportation, and medical applications...

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