GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, recently introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications...

GaN Systems has announced a new reference design for the highest power density, high efficiency 65W Active Clamp Flyback (ACF) GaN charger in collaboration with Silanna Semiconductor. The reference design is now available at Silanna Semiconductor and provides an easy design for ACF USB-C PD GaN chargers, reducing design cycles and product time to market

We often think of the industrial sector as conservative, especially in the implementation of new technologies. But as we’ve moved into the latest phase of the industrial revolution – Industry 4.0 – which encompasses smart manufacturing and Industrial IoT (IIoT), pioneering technologies like GaN (gallium nitride) power transistors are being embraced. GaN is making waves

New Half-Bridge Daughter Cards Feature Renesas GaN FET Drivers GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to

New Reference Design Leads in Size, Thermals, EMI, And Efficiency Performance GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, has announced a new reference design for a high power density 65W QR (quasi-resonant) charger targeted for the consumer electronics market, including mobile phone and laptop computer applications. The reference design comprises of