This guide highlights our GaN & SiC evaluation boards and reference designs with links to individual web SKU pages. Includes gate driver evaluation products from ADI, pSemi and Power Integrations. DOWNLOAD NOW
GaN E-HEMT Drivers pSemi's UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. This speed advantage results in significantly smaller power converters, which benefits the design engineer with increased power density. With a switching frequency up to 40 MHz, pSemi’s GaN drivers deliver the industry’s fastest switching speeds,
The PE29102/GS61004B evaluation board allows the user to evaluate the PE29102 gate driver in a full-bridge configuration. The PE29102 integrated high-speed driver is designated to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second
