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Updated! GaN and SiC Evaluation Kits & Reference Designs

2019-04-04T12:27:30-05:00March 6th, 2018|Categories: Analog Devices, Featured, GaN Power Transistor Test & Evaluation Products, Power Integrations, pSemi, Silicon Carbide Test & Evaluation Products|

This guide highlights our GaN & SiC evaluation boards and reference designs with links to individual web SKU pages. Includes gate driver evaluation products from ADI, pSemi and Power Integrations. DOWNLOAD NOW

GaN E-HEMT Drivers with Switching Speeds up to 40 MHz

2018-09-13T14:17:18-05:00September 10th, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, Gate Drivers, pSemi|

GaN E-HEMT Drivers pSemi's UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. This speed advantage results in significantly smaller power converters, which benefits the design engineer with increased power density. With a switching frequency up to 40 MHz, pSemi’s GaN drivers deliver the industry’s fastest switching speeds,

pSemi PE29102: GaN Power Transistor Evaluation Board

2018-07-29T14:02:56-05:00March 31st, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, pSemi|

The PE29102/GS61004B evaluation board allows the user to evaluate the PE29102 gate driver in a full-bridge configuration. The PE29102 integrated high-speed driver is designated to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second

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