RECOM White Paper When evaluating new switching transistors circuits, often only the transistor specifications are considered. However, a very significant contributor in the robustness of the final design is the driver circuit. This whitepaper shares some design guidelines and advice on how to reduce failure causes and simplify the design - with application examples
RECOM’s 3W SMD Single- and Dual-Output RA3 series DC/DC Converters for Si, SiC and GaN Power Transistor Gate Drivers
Meets harsh environmental requirements for renewable energy RECOM’s RA3 series features 3-watt DC/DC converters which are especially designed to power transistor gate drivers. The modules are available with input voltages of 5, 12, or 24 VDC with single or dual asymmetric outputs to cover the latest Si, SiC, and GaN transistors on the market today.
Learn all about why RECOM's AC/DC and DC/DC converters are a great option in this real-life example of an EV charger application. LISTEN NOW
DC/DC converters are often required to provide an isolated asymmetric supply for high-side gate drivers. The simplest (functional) isolation can withstand 1kVDC for one second. This sounds impressive; however this is often not sufficient. High side inverters are often floated a few hundred volts with an opto-isolated PWM control, so the gate drivers need
RECOM's R-REF01-HB consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V /
High slew-rate GaN transistors require an isolated 6V supply with high isolation voltage and low isolation capacitance. The RxxP06S and RP-xx06X series have been designed to fulfill this demanding requirement. The internal transformers in both series use a pot-core to physically separate the input and output windings, however the converters still fit into an
The RxxPxxyyD Series devices feature 6400 VDC isolation and <10 pF isolation capacitance and have been designed to fulfill the demanding requirements of high slew-rate SiC transistor drivers. These new DC/DC converters can be used with equal power (1W + 1W) or equal current (1.6W + 0.4W) driver applications, as the dual outputs feature