6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Wolfspeed’s Silicon Carbide (SiC) 650V Schottky Diode technology is optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, and consumer electronics. The new C6D08065Q features: Blocking voltage: 650 V Current rating: 8 A
C6D10065Q from Wolfspeed With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with
Additions to Wolfspeed’s family of SiC Schottky diodes enabling industry-leading efficiency and power density for the most demanding power conversion applications Wolfspeed continues to add to its 6th generation (C6D) 650 V SiC Schottky diode family based on its innovative, robust and reliable 150 mm SiC wafer technology. The C6D technology offers lowest forward voltage
In-stock now at Richardson RFPD The new 6th generation (C6D) 650 V SiC Schottky diode family is based on Wolfspeed’s innovative, robust and reliable 150 mm SiC wafer technology. The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of
The demand for silicon carbide (SiC) MOSFETs and diodes is growing rapidly, particularly within automotive, industrial and energy applications due to the improved efficiency, superior power density and lower system costs. Review our list of featured Wolfspeed products available for sampling. Click through to our brief form to provide your project details. We’ll then be
Microsemi SiC Schottky diode modules offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs. Features include: Essentially zero forward and reverse recovery = reduced switch and diode switching losses Temperature independent switching behavior = stable high temperature performance Positive temperature coefficient of VF = ease of parallel operation
16 A, 650 V, Z-Rec® Schottky, TO-247-3 package BENEFITS INCLUDE: Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway FEATURES INCLUDE: 650-volt Schottky rectifier Zero reverse recovery current Zero forward recovery voltage High-frequency operation
For the most demanding power conversion applications! The new 6th generation (C6D) 650 V SiC Schottky diode family is based on Wolfspeed’s innovative, robust and reliable 150 mm SiC wafer technology. The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction
Optimized for high-voltage, high-power environments Wolfspeed’s 1700V Silicon Carbide (SiC) Schottky Diodes (introduced January 2019), incorporate advanced 5th-generation technology from Cree’s 150mm production facilities. With its complementary SiC MOSFETs, Wolfspeed offers the most comprehensive 1700V portfolio in the industry, enabling high efficiency and power density. The C5D family is intended to supersede the original
An improved creepage distance makes the C4D family expansion ideal for high-voltage applications in environments with heightened levels of pollution, such as off-board battery chargers and solar inverters in urban settings. This portfolio expansion offers significant advantage for our energy and transportation customers who require increased reliability and performance in challenging outdoor settings. The
