Microchip 3.3 kV Silicon Carbide MOSFETs & Schottky Barrier Diodes

2022-05-09T15:47:47-05:00May 9th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Enabling new levels of efficiency and reliability Microchip’s SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment. What Problem Are We Solving? 3.3 kV Silicon IGBTs are limited in performance

Microchip 3.3 kV, 80 mΩ Silicon Carbide MOSFET in TO-247-4 package

2022-04-24T14:49:27-05:00April 24th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

MSC080SMA330B4 SiC N-Channel Power MOSFET The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA330B4 device is a 3300 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source

New 1700 V, 500 A Silicon Carbide Half-Bridge Module from Wolfspeed

2022-04-04T17:57:43-05:00April 4th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

CAB500M17HM3: Designed for Ultra-High Power Density Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide in power density sensitive applications, while maintaining the baseplate compatibility of a 62 mm module. The HM platform’s SiC-optimized packaging enables 175°C continuous junction operation, with a high-reliability Silicon Nitride (Si3N4) power substrate

SiC in Stock: Microchip 3 Phase Leg 1200V/251A SiC Module in Low Stray Inductance Package

2022-03-22T15:54:19-05:00March 22nd, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSCSM120TAM11CTPAG Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High power and efficient converters and inverters

SiC in Stock: Microchip 700 V, 35 mΩ SiC MOSFET in TO-247-4 Package

2022-04-07T17:22:07-05:00March 14th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature,

SiC in Stock: Microchip 1200 V, 80 mΩ SiC MOSFET in TO-247-4 package

2022-04-07T17:23:45-05:00March 8th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max)

SiC in Stock: Microchip Full-bridge 1200V/173A SiC Power Module

2022-02-05T16:58:54-06:00February 5th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

MSCSM120HM16CT3AG SiC MOSFET FeaturesSiC Power MOSFETLow RDS(on)High temperature performanceSilicon carbide (SiC) Schottky diodeZero reverse recoveryZero forward recoveryTemperature-independent switching behaviorPositive temperature coefficient on VFLow stray inductanceInternal thermistor for temperature monitoringAluminum nitride (AlN) substrate for improved thermal performanceBenefitsHigh power and efficiency converters and invertersOutstanding performance at high-frequency operationDirect mounting to heatsink (isolated package)Low junction to case thermal

SiC in Stock: 1200 V, 32 mΩ SiC MOSFET in TO-247 Package

2022-01-23T17:02:13-06:00January 23rd, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

C3M0032120D from Wolfspeed Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The

Wolfspeed WolfPACK SiC Baseplate-less Modules in Stock

2022-01-18T15:32:10-06:00January 18th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

CCB032M12FM3: 1200 V, 32 mΩ Six-Pack Module Technical FeaturesUltra-Low LossHigh Frequency OperationZero Turn-Off Tail Current from MOSFETNormally-Off, Fail-Safe Device OperationApplicationsEV ChargersSolarHigh-Efficiency Converters / InvertersMotor & Traction DrivesSmart-Grid / Grid-Tied Distributed GenerationSystem BenefitsEnables Compact, Lightweight SystemsIncreased System Efficiency due to Low Switching & Conduction Losses of SiCReduced Thermal Requirements and System Cost

Wolfspeed Expands WolfPACK™ with Higher Current GM3 Solutions

2022-01-10T16:11:52-06:00January 10th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Delivering the industry’s highest power density in its class for unsurpassed efficiency, brought to you by the leaders in silicon carbide Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to

Go to Top