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SiC in Stock: 1200V, 25mΩ SiC MOSFET in SOT-227 Package – Samples Available

2022-09-27T15:02:07-05:00September 27th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSC025SMA120J Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantIsolated voltage to 2500VBenefits:High efficiency to enable lighter/compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates the need of

Wolfspeed Adds AEC-Q101 Silicon Carbide MOSFETs to 650V Offering

2022-09-26T11:05:17-05:00September 26th, 2022|Categories: Featured, News, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Extends Wolfspeed’s AEC-Q101 Qualified E3M Range Wolfspeed's new automotive qualified E-Series (E3M) 650 V, 60 mΩ MOSFET family helps designers meet the demands of the EV OBC application space. Developed using the company's 3rd generation SiC MOSFET technology, the E3M0060065D and E3M0060065K devices (Figure 1) feature high blocking voltage with low ON-resistance, high-speed switching with

SiC In Stock: 1200V, 78A Baseplateless SiC Power Module in Compact, Industry-Standard Footprint

2022-09-26T11:43:37-05:00September 26th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Wolfspeed CAB016M12FM3 Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint. The family of modules provide an excellent

Wolfspeed 62mm BM3 Silicon Carbide Modules for High Frequency Industrial Applications

2022-09-18T17:04:45-05:00September 18th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

New BM3 Half-Bridge Module with Schottky Diodes Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed Silicon Carbide switching benefits and increased system efficiency, due to the low-inductance layout.

SiC in Stock: 1200V, 805A Low-inductance SiC Module for Welding, UPS, EV Motor & Traction Drives

2022-08-21T18:02:38-05:00August 21st, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSCSM120AM03CT6LIAG Features:Phase LegVDSS (V): 1200RDSon (mR) typ: 2.5Current (A) Tc=80C: 641Silicon Type: SiC MOSFETPackage: SP6C LIBenefits:High efficiency converterOutstanding performance at high-frequency operationDirect mounting to heatsink (isolated package)Low junction-to-case thermal resistanceLow profileRoHS compliantApplications:Welding convertersSwitched mode power suppliesUninterruptible Power SuppliesEV motor and traction drive LEARN MORE / ORDER ASK AN EXPERT

Wolfspeed Expands 62mm BM3 SiC Power Module Offering, Ideal for Higher-Frequency Industrial Applications

2022-08-17T17:02:30-05:00August 17th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

New BM3 Half-Bridge Module with Schottky Diodes Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed Silicon Carbide switching benefits and increased system efficiency, due to the low-inductance layout.

SiC in Stock: 1700V, 750mΩ MOSFET in TO-247-4 Package Featuring Superior Avalanche Ruggedness, Available for Sampling

2022-08-01T18:19:46-05:00August 1st, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSC750SMA170B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense. Features: Low capacitances and

SiC in Stock: 1200V, 400A Module in Robust 62mm Package for Industrial Test Equipment, Rail/Traction and EV Charging Infrastructure

2022-08-01T17:47:13-05:00August 1st, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Wolfspeed's WAB400M12BM3 Half-Bridge Module for Switching & Conduction Optimized Applications Wolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is a

650 V SiC Power MOSFETs in TO-Leadless (TOLL) Packages for High-Current, High-Power-Density Applications

2022-07-24T13:15:56-05:00July 24th, 2022|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

TOLL MOSFETs with a compact footprint: enabling high efficiency and high power density in the most demanding server and data center applications The surface-mount TOLL is an innovative package that the industry is adopting – typically for high-current, high-power–density applications. Wolfspeed’s industrial-application–qualified 650 V SiC MOSFETs in the TOLL package are significantly smaller than other

SiC in Stock: 700V, 90 mΩ SiC MOSFET in TO-247 Package for Industrial Motor Drives and More

2022-07-18T08:10:25-05:00July 18th, 2022|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSC090SMA070B The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. Features: Low capacitances and low gate charge Fast

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