1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Wolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low capacitances and
1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Wolfspeed’s new C-HM3 platform targets applications which need to leverage the baseplate compatibility of a 62mm footprint but reap the benefits of a lightweight power module. With all-MOSFET and MOSFET-diode device configurations, the HM3 module offers configurations a variant to fit
1200 V / 16 mΩ fastPACK E2 SiC Module Features: Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate
1200 V H-Bridge SiC Power Module Features: Integrated with Wolfspeed's 1200 V SiC MOSFET die Baseplateless housing and advanced die attach technology for enhanced reliability Kelvin Emitter configuration Integrated NTC Benefits: Compact and light design High efficiency and higher switching frequency enables smaller passive components Extended lifetime also in harsh environments Easy
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.
Breakthrough Technology Combines High Performance With Low Losses SiC Module Advantages: High-speed switching Low switching losses Low-input capacitance High-power density Low-profile packages Minimum parasitic inductance Lower system cost Standard and custom modules 30+ years design experience LEARN MORE ASK
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package. Features: Low capacitances and low gate charge Fast switching
1200 V, 425 A Silicon Carbide Switching-Loss Optimized XM3 Half-Bridge Module The CAB425M12XM3 is the newest addition to Wolfspeed's XM3 power module platform, developed to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module,
This Mitsubishi Electric presentation at Power Conference 2019 covered SiC power devices, including Mitsubishi's 2nd gen 6.5kV SBD-embedded SiC MOSFETs, as well as milestones, applications and the outlook for SiC's expansion. LEARN MORE!
