Enabling new levels of efficiency and reliability Microchip’s SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment. What Problem Are We Solving? 3.3 kV Silicon IGBTs are limited in performance
MSC080SMA330B4 SiC N-Channel Power MOSFET The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA330B4 device is a 3300 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source
CAB500M17HM3: Designed for Ultra-High Power Density Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide in power density sensitive applications, while maintaining the baseplate compatibility of a 62 mm module. The HM platform’s SiC-optimized packaging enables 175°C continuous junction operation, with a high-reliability Silicon Nitride (Si3N4) power substrate
Microchip MSCSM120TAM11CTPAG Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High power and efficient converters and inverters
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature,
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max)
MSCSM120HM16CT3AG SiC MOSFET FeaturesSiC Power MOSFETLow RDS(on)High temperature performanceSilicon carbide (SiC) Schottky diodeZero reverse recoveryZero forward recoveryTemperature-independent switching behaviorPositive temperature coefficient on VFLow stray inductanceInternal thermistor for temperature monitoringAluminum nitride (AlN) substrate for improved thermal performanceBenefitsHigh power and efficiency converters and invertersOutstanding performance at high-frequency operationDirect mounting to heatsink (isolated package)Low junction to case thermal
C3M0032120D from Wolfspeed Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The
CCB032M12FM3: 1200 V, 32 mΩ Six-Pack Module Technical FeaturesUltra-Low LossHigh Frequency OperationZero Turn-Off Tail Current from MOSFETNormally-Off, Fail-Safe Device OperationApplicationsEV ChargersSolarHigh-Efficiency Converters / InvertersMotor & Traction DrivesSmart-Grid / Grid-Tied Distributed GenerationSystem BenefitsEnables Compact, Lightweight SystemsIncreased System Efficiency due to Low Switching & Conduction Losses of SiCReduced Thermal Requirements and System Cost
Delivering the industry’s highest power density in its class for unsurpassed efficiency, brought to you by the leaders in silicon carbide Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to
