MSC035SMA170S offers superior avalanche ruggedness FeaturesLow capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = 175 CFast and reliable body diodeSuperior avalanche ruggednessRoHS compliantBenefitsHigh efficiency to enable lighter, more compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates

Increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness

for 1.2kV and 1.7kV 62MM, D3, SP6 SiC modules The 62mm Electrical Master is a 2-Channel Gate Driver Board for 1.2kV and 1.7kV 62MM, D3, SP6 SiC modules. These Plug and Play Gate Driver Boards feature Augmented Switching™ control, robust short circuit protection and are fully software configurable. Optimized for Heavy Duty Vehicle, Auxiliary Power

Microchip’s SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment. Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max)

Microchip MSCSM120AM027CD3AG Features:SiC Power MOSFETLow RDS(on)High temperature performanceSilicon carbide (SiC) Schottky diodeZero reverse recoveryZero forward recoveryTemperature-independent switching behaviorPositive temperature coefficient on VFKelvin source for easy driveHigh level of integrationAluminum nitride (AlN) substrate for improved thermal performanceM6 power connectorsBenefits:High efficiency converterStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS compliantApplications:Welding convertersSwitched mode

Achieve Desired Size and Switching Efficiency Without Overdesigning Your System The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247

The MSC015SMA070B increases performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. Features: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche