1200 V / 16 mΩ fastPACK E2 SiC Module Features: Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate
1200 V H-Bridge SiC Power Module Features: Integrated with Wolfspeed's 1200 V SiC MOSFET die Baseplateless housing and advanced die attach technology for enhanced reliability Kelvin Emitter configuration Integrated NTC Benefits: Compact and light design High efficiency and higher switching frequency enables smaller passive components Extended lifetime also in harsh environments Easy
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.
Breakthrough Technology Combines High Performance With Low Losses SiC Module Advantages: High-speed switching Low switching losses Low-input capacitance High-power density Low-profile packages Minimum parasitic inductance Lower system cost Standard and custom modules 30+ years design experience LEARN MORE ASK
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package. Features:Low capacitances and low gate chargeFast switching speed due to
1200 V, 425 A Silicon Carbide Switching-Loss Optimized XM3 Half-Bridge Module The CAB425M12XM3 is the newest addition to Wolfspeed's XM3 power module platform, developed to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module,
This Mitsubishi Electric presentation at Power Conference 2019 covered SiC power devices, including Mitsubishi's 2nd gen 6.5kV SBD-embedded SiC MOSFETs, as well as milestones, applications and the outlook for SiC's expansion. LEARN MORE!
This Wolfspeed presentation from Power Conference 2019 is entitled "Enabling and Expanding Broader Power Markets with Wolfspeed Silicon Carbide." Key takeaways include: SiC-based solutions are proven to have higher efficiency, power density, and system cost effectiveness than traditional Si-based solutions Wolfspeed is proven to be the worldwide leader in SiC power semiconductors and is
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The
Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. The 3rd generation planar MOSFET technology includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs
