62mm (BM3) Half-Bridge Module for Switching & Conduction Optimized Applications Wolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is a perfect
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mΩ 650 V SiC MOSFETs The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M™ SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high
Delivering the industry’s highest power density in its class for unsurpassed efficiency, brought to you by the leaders in silicon carbide Wolfspeed’s latest power modules enable multiple configurations across power levels for electric vehicle fast charging, industrial power, UPS, induction heating and welding, industrial motor drive, power supply, solar and renewable energy and grid
Features include: Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness LEARN MORE
The demand for silicon carbide (SiC) MOSFETs and diodes is growing rapidly, particularly within automotive, industrial and energy applications due to the improved efficiency, superior power density and lower system costs. Review our list of featured Wolfspeed products available for sampling. Click through to our brief form to provide your project details. We’ll then be
1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Wolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense. Features: Low capacitances and
1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Wolfspeed’s new C-HM3 platform targets applications which need to leverage the baseplate compatibility of a 62mm footprint but reap the benefits of a lightweight power module. With all-MOSFET and MOSFET-diode device configurations, the HM3 module offers configurations a variant to fit
1200 V / 16 mΩ fastPACK E2 SiC Module Features: Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate
1200 V H-Bridge SiC Power Module Features: Integrated with Wolfspeed's 1200 V SiC MOSFET die Baseplateless housing and advanced die attach technology for enhanced reliability Kelvin Emitter configuration Integrated NTC Benefits: Compact and light design High efficiency and higher switching frequency enables smaller passive components Extended lifetime also in harsh environments Easy
