Wolfspeed C3M0075120J Features C3M™ SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing
Microchip MSC025SMA120J Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantIsolated voltage to 2500VBenefits:High efficiency to enable lighter/compact systemSimple to drive and easy to parallelImproved thermal capabilities and lower switching lossesEliminates the need of
Extends Wolfspeed’s AEC-Q101 Qualified E3M Range Wolfspeed's new automotive qualified E-Series (E3M) 650 V, 60 mΩ MOSFET family helps designers meet the demands of the EV OBC application space. Developed using the company's 3rd generation SiC MOSFET technology, the E3M0060065D and E3M0060065K devices (Figure 1) feature high blocking voltage with low ON-resistance, high-speed switching with
Wolfspeed CAB016M12FM3 Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry standard footprint. The family of modules provide an excellent
New BM3 Half-Bridge Module with Schottky Diodes Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed Silicon Carbide switching benefits and increased system efficiency, due to the low-inductance layout.
Microchip MSCSM120AM03CT6LIAG Features:Phase LegVDSS (V): 1200RDSon (mR) typ: 2.5Current (A) Tc=80C: 641Silicon Type: SiC MOSFETPackage: SP6C LIBenefits:High efficiency converterOutstanding performance at high-frequency operationDirect mounting to heatsink (isolated package)Low junction-to-case thermal resistanceLow profileRoHS compliantApplications:Welding convertersSwitched mode power suppliesUninterruptible Power SuppliesEV motor and traction drive LEARN MORE / ORDER ASK AN EXPERT
New BM3 Half-Bridge Module with Schottky Diodes Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed Silicon Carbide switching benefits and increased system efficiency, due to the low-inductance layout.
Microchip MSC750SMA170B4 The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense. Features: Low capacitances and
Wolfspeed's WAB400M12BM3 Half-Bridge Module for Switching & Conduction Optimized Applications Wolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is a
TOLL MOSFETs with a compact footprint: enabling high efficiency and high power density in the most demanding server and data center applications The surface-mount TOLL is an innovative package that the industry is adopting – typically for high-current, high-power–density applications. Wolfspeed’s industrial-application–qualified 650 V SiC MOSFETs in the TOLL package are significantly smaller than other
