Part of our Tech Chat series In this Tech Chat, we discuss a SiC MOSFET's threshold voltage and its importance on switching loss and immunity to noise and voltage spikes.Speakers:Steven Chenetz, Discrete and Power Management Field Applications Engineer, MicrochipKirk Barton, Field Applications Engineer, Richardson RFPD MORE TECH CHAT!
Part of our Tech Chat series What is avalanche and why does it occur? How does it affect reliability of a device? Why and how does Microchip emphasize avalanche testing in its SiC MOSFETs to enhance reliability? All questions are answered in this Tech Chat. MORE TECH CHAT!
Part of our Tech Chat series When it is not practical to use a power module in your design, paralleling MOSFETs is a common approach. This Tech Chat addresses any special considerations when paralleling silicon carbide MOSFETs. MORE TECH CHAT!
Part of our Tech Chat series This Tech Chat helps design engineers better understand how the Rds(on) of Wolfspeed's SiC MOSFETs compare to other available technologies, such as GaN, Silicon or other SiC devices. MORE TECH CHAT!
Part of our Tech Chat series Growing demand for more efficient power supply adapters has led to increasing adoption of GaN power devices in this market. These high density adapters require thermal optimization considerations. View our Tech Chat to learn more. MORE TECH CHAT!
Part of our Tech Chat series Gate drivers provide the first line of defense against short-circuit faults on power semiconductor devices. When comparing different types of power semiconductor technologies – IGBTs v. silicon carbide, for example – there are differences in the short circuit withstand capabilities. This Tech Chat discusses reasons for SiC module failure
Part of our Tech Chat series Mitigating EMC in GaN power circuits does not require extra design efforts. In fact, the EMC performance and solutions of GaN are very similar to silicon MOSFETs. Learn more in this Tech Chat with GaN Systems. MORE TECH CHAT!
Part of our Tech Chat series Design engineers can realize the extended benefits of SiC with the simple implementation of a 4-lead, TO-247 package device. Learn more in this Tech Chat. MORE TECH CHAT!
Part of our Tech Chat series Just how easy is it to characterize the junction temperature of GaN Systems devices? In this Tech Chat, temperature measurement using Long-wave Infrared (LWIR) cameras is discussed. MORE TECH CHAT!
Part of our Tech Chat series Gate drivers are required for voltage level shifting, charging and discharging the system and drive strength to charge and discharge quickly. In this Tech Chat, we discuss why gate drive strength is essential to supporting the faster switching of Gallium Nitride (GaN) and Silicon Carbide (SiC) for lower losses
