Part of our Tech Chat series Design engineers can realize the extended benefits of SiC with the simple implementation of a 4-lead, TO-247 package device. Learn more in this Tech Chat. MORE TECH CHAT!
Part of our Tech Chat series Just how easy is it to characterize the junction temperature of GaN Systems devices? In this Tech Chat, temperature measurement using Long-wave Infrared (LWIR) cameras is discussed. MORE TECH CHAT!
Part of our Tech Chat series Gate drivers are required for voltage level shifting, charging and discharging the system and drive strength to charge and discharge quickly. In this Tech Chat, we discuss why gate drive strength is essential to supporting the faster switching of Gallium Nitride (GaN) and Silicon Carbide (SiC) for lower losses
Part of our Tech Chat series GaN Systems’ Enhancement-Mode Gallium Nitride (GaN) technology is often compared to other GaN technologies, such as cascode. In this Tech Chat, we discuss how GaN Systems differentiates itself from other normally off GaN technologies to achieve lower losses, simplified use at higher power levels and proven reliability.
Part of our Tech Chat series Why negative gate driving voltage? In this Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs - how adding negative gate bias improves noise immunity, avoiding false turn-on in a half bridge configuration and the recommendation to use negative voltage for a Totem
Part of our Tech Chat series Commode Mode Transient Immunity as it relates to gate drivers is explained in this Tech Chat as well as the minimum gate driver CMTI required for converters integrated with Gallium Nitride (GaN) or Silicon Carbide (SiC) power semiconductors. CM Transients can affect gate driver timing and performance. Incorrect gate