Presentation: Analysis and Benefits of GaN in High Frequency WPT Applications

2021-07-04T17:55:13-05:00July 4th, 2021|Categories: Featured, GaN Systems, Video|

GaN Systems Workshop for IEEE Wireless Power Week 2021 There is still another cord to cut: Power. But the current low frequency wireless power transfer (WPT) technology is low power, slow charging and low efficiency – this will not advance the market. Paul Wiener presents a workshop for IEEE Wireless Power Week 2021 on the

Tech Chat with GaN Systems – Demystifying the GaN EMC Design Practice

2021-07-04T16:57:52-05:00July 4th, 2021|Categories: Featured, GaN Systems, Tech Chat, Video|

Part of our Tech Chat series Mitigating EMC in GaN power circuits does not require extra design efforts. In fact, the EMC performance and solutions of GaN are very similar to silicon MOSFETs. Learn more in this Tech Chat with GaN Systems. MORE TECH CHAT!

Video: Overview of Microchip’s 30kW Vienna rectifier reference design

2021-06-20T14:22:18-05:00June 20th, 2021|Categories: Featured, Microchip, Video|

In this short video, Microchip's Jason Chiang reviews the reference design for a 30kW inverter aimed at EV charging applications that is based on silicon-carbide semiconductors. The resulting circuitry is roughly three times smaller than the equivalent silicon-based approach. The reference design operates from a 380-400-V ac input and employs a DSP chip to handle

Tech Chat with Analog Devices: Why Gate Driver Drive Strength is Essential

2021-04-27T16:45:58-05:00April 27th, 2021|Categories: Analog Devices, Featured, Tech Chat, Video|

Part of our Tech Chat series Gate drivers are required for voltage level shifting, charging and discharging the system and drive strength to charge and discharge quickly. In this Tech Chat, we discuss why gate drive strength is essential to supporting the faster switching of Gallium Nitride (GaN) and Silicon Carbide (SiC) for lower losses

Tech Chat with GaN Systems – E-Mode Technology Benefits

2021-04-19T15:49:09-05:00April 19th, 2021|Categories: Featured, GaN Systems, Tech Chat, Video|

Part of our Tech Chat series GaN Systems’ Enhancement-Mode Gallium Nitride (GaN) technology is often compared to other GaN technologies, such as cascode. In this Tech Chat, we discuss how GaN Systems differentiates itself from other normally off GaN technologies to achieve lower losses, simplified use at higher power levels and proven reliability.

Tech Chat with Wolfspeed: Understanding Operational and Maximum Gate Drive Levels for SiC MOSFETs

2021-04-13T16:42:52-05:00April 13th, 2021|Categories: Featured, Tech Chat, Video, Wolfspeed|

Part of our Tech Chat series Why negative gate driving voltage? In this Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs - how adding negative gate bias improves noise immunity, avoiding false turn-on in a half bridge configuration and the recommendation to use negative voltage for a Totem

Tech Chat with Analog Devices: Common Mode Transient Immunity

2021-04-05T16:43:12-05:00April 5th, 2021|Categories: Analog Devices, Featured, Tech Chat, Video|

Part of our Tech Chat series Commode Mode Transient Immunity as it relates to gate drivers is explained in this Tech Chat as well as the minimum gate driver CMTI required for converters integrated with Gallium Nitride (GaN) or Silicon Carbide (SiC) power semiconductors. CM Transients can affect gate driver timing and performance. Incorrect gate

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