1200 V / 16 mΩ fastPACK E2 SiC Module Features: Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate

1200 V H-Bridge SiC Power Module Features: Integrated with Wolfspeed's 1200 V SiC MOSFET die Baseplateless housing and advanced die attach technology for enhanced reliability Kelvin Emitter configuration Integrated NTC Benefits: Compact and light design High efficiency and higher switching frequency enables smaller passive components Extended lifetime also in harsh environments Easy

Stepping up to peak performance and efficiency with Vincotech’s SiC-driven power modules No one has sold more SiC-driven power modules than Vincotech, and if you want to boost efficiency, then SiC components are for you – doubly so if you also want to build a smaller, lighter system while supersizing, rather than sacrificing, performance.