The demand for silicon carbide (SiC) MOSFETs and diodes is growing rapidly, particularly within automotive, industrial, and energy applications due to the improved efficiency, superior power density, and lower system costs. Learn how to approach your design correctly, make all the right considerations and select the optimum SiC MOSFET for your system from the
By switching to SiC MOSFETs, power system designers can significantly boost power density, lower switching losses, and improve thermal management in OBCs for electric vehicles. Power systems in electric vehicles (EVs), on-board and off-board battery chargers, and other energy storage systems are demanding greater energy efficiency to pack more power into... Read More!
Wolfspeed’s new line of 650V SiC MOSFETS, which incorporate the latest third-generation C3M silicon carbide (SiC) technology, join its established family of industry-leading sixth-generation C6D Schottky diodes, to deliver today’s design engineer exceptional performance, reliability, and efficiency... Read More!
Wolfspeed’s silicon carbide (SiC) solutions help create smaller, lower-cost, energy-efficient fast chargers. With higher power conversion capabilities, faster switching speeds, and improved thermal performance, SiC is an ideal material to meet the extreme power demands of modern fast-charging stations. Tune in to this webinar presented by Wolfspeed and Richardson RFPD to learn more about
ADI and Wolfspeed combine market-leading MOSFETs and gate drivers to deliver high-efficiency and high-reliability system solutions across industrial, energy and automotive applications. These solutions are backed by industry-relevant reference designs, evaluation platforms and hardware design packages. Download now
Join Richardson RFPD at PowerUp Expo, a virtual conference and exhibition focusing on power electronics. Richardson RFPD will be highlighting the latest GaN and SiC evaluation platforms and reference designs from industry-leading suppliers Analog Devices, GaN Systems, Microchip, Wolfspeed, Vincotech and more to help speed your time to market integrating these innovative technologies. Visit
Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M™) 650V SiC MOSFETs and 6th Generation 650 V SiC Schottky diodes. Analyze the evaluation board in versatile power conversion topologies, such as Synchronous / Asynchronous Buck or Boost converter, Half Bridge and Full Bridge (Please note: Full
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.
2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET CRD-02AD065N reference design features and benefits: Highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs Comfortably achieve Titanium standard by having > 98.5% efficiency while THD <
6.6kW High Power Density Bi-Directional EV On-Board Charger The CRD-06600FF065N is a demonstration of Wolfspeed's 650 V, 60 mOhm (C3M) SiC MOSFETs in a 6.6 kW Bi-Directional converter targeting high efficiency and high power density on-board charging applications.The demo board consists of a bi-directional totem pole PFC (AC/DC) stage and an isolated bi-directional DC/DC stage
