Download Reference Design Files This reference design demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET technology in TOLL (TO - Leadless) package to create a 3.6kW bridgeless totem-pole PFC for server, data, and mining power supplies and telecom systems. Wolfspeed’s TOLL package offers low conduction and switching losses, which further enables smaller,
HIGH EFFICIENCY, HIGH POWER DENSITY DOCUMENTATION ONLYThis reference design demonstrates the application of Wolfspeed’s C3M 650 V Silicon Carbide MOSFET technology in TOLL (TO - Leadless) package to create a 3.6kW bridgeless totem-pole PFC for server, data, and mining power supplies and telecom systems. Wolfspeed’s TOLL package offers low conduction and switching losses, which further
RICHARDSON RFPD HIGHLIGHTS AT PCIM EUROPE 2022 If you’re traveling to the PCIM Europe in Nuremberg May 10-12, be sure to visit the Richardson RFPD stand (Hall 6, Stand 434). Discuss the latest in gallium nitride and silicon carbide from the industry’s leading names with our engineering team, as well as the gate driver, passive
Wolfspeed Webinar | Thursday, May 19 | 8AM PDT / 11AM EDT / 17:00 PM CEST Led by applications such as EV and traction drives, energy storage systems, and DC fast chargers, modern designs have demanding power needs. With these strict performance requirements, Silicon Carbide has quickly become a semiconductor of choice. For engineers
Technical Article Wolfspeed's family of WolfPACK™ modules from Richardson RFPD deliver a power portfolio that encompasses a wide spectrum of applications for today’s designers, whether they’re working on single-kilowatt designs or megawatt systems — and anything in between. Download this technical article to learn more how these modules offer incredibly low losses in a
6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Wolfspeed’s Silicon Carbide (SiC) 650V Schottky Diode technology is optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, and consumer electronics. The new C6D08065Q features: Blocking voltage: 650 V Current rating: 8 A
Schedule a meeting! Visit Richardson RFPD at Hall 6, Stand 434 to learn about the latest in GaN & SiC technologies from the industry's leading names, including:GaN SystemsDiscover how Gallium Nitride can help you differentiate your products in the areas of consumer, renewable energy, transportation, data center and industrial power supply applicationsLearn how to different
CAB500M17HM3: Designed for Ultra-High Power Density Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide in power density sensitive applications, while maintaining the baseplate compatibility of a 62 mm module. The HM platform’s SiC-optimized packaging enables 175°C continuous junction operation, with a high-reliability Silicon Nitride (Si3N4) power substrate
Files available for download This reference design demonstrates the application of Wolfspeed's 1200V C3M™ SiC MOSFETs to create a 22kW Bi-directional High Efficiency DC/DC Converter for electric vehicle (EV) on-board (OBC) and off-board fast charging applications. This design is compatible with a wide DC bus input voltage range of 380V-900V and a wide DC
Wolfspeed Webinar | Wednesday, April 13 | 8:00AM PDT, 11AM EDT, 17:00 CEST Silicon Carbide offers well-known performance advantages for applications like automotive drivetrains, automotive charging, and high-frequency–based systems, yet markets such as industrial motor and motion linger as a silicon stronghold.With the overarching urgency for higher-efficiency motor systems as well as the need for
