Now that silicon carbide has been established as a transformative technology, many power designers are focusing on SiC device level qualification, reliability and consistency of supply. Wolfspeed is leading the pack with comprehensive proven product reliability across its entire vertical supply chain, ensuring that the unprecedented market demand for SiC can be realized throughout the
Current trends in electrification are placing increasing demands on the power electronics for improved efficiency, higher power capability and higher power density. Since these demands apply to systems, the requirements extend down to the component level. Silicon carbide (SiC) is poised to rapidly replace silicon (Si) in many applications due to the higher performance characteristics
The electric vehicle (EV) market is expected to jump from 3.2 million units in 2019 to nearly 27 million units by the year 2030. Major players in this industry are expected to invest more than $350 billion in the near future to grow the electric vehicle market. Wolfspeed understands the technological challenges that EVs present
This evaluation board demonstrates the switching and thermal performance of 650V SiC C3M MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in SiC MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation
From watts to megawatts Wolfspeed SiC has enabled countless applications across automotive, industrial and energy markets. Wolfspeed SiC is all around. This webinar will highlight several common applications and review why designers are increasingly selecting SiC over incumbent technologies. Attendees will learn: AC-DC PFC applications and the real benefits of SiC over silicon DC-DC
Join us for session 1 of 4 in Richardson RFPD's "Walk Around the Block" webinar series, EV Fast Charging Design Topics, addressing design challenges and trending topics relative to power electronics applications. Today's requirements for electric vehicle (EV) on-board charger (OBC) efficiency, size and cost are becoming increasingly demanding. This presentation will serve
2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET CRD-02AD065N reference design features and benefits: Highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs Comfortably achieve Titanium standard by having > 98.5% efficiency while THD <
1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Wolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is
Transforming Power with Industry-leading Silicon Carbide Expertise & Capacity Download the new Wolfspeed Power Products brochure that includes details on all available SiC diodes, MOSFETs, modules, evaluation products and reference designs. You’ll find featured sections on 650V SiC MOSFETs, E-SeriesTM Automotive SiC MOSFETs, BM/62mm and XM3/53mm modules and more. Download Now!
In high power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts, and to maximize those gains you’ll need to drive them effectively. Learn more about the nuances of designing SiC gate drive circuits in the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive
