Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M™) 650V SiC MOSFETs and 6th Generation 650 V SiC Schottky diodes. Analyze the evaluation board in versatile power conversion topologies, such as Synchronous / Asynchronous Buck or Boost converter, Half Bridge and Full Bridge (Please note: Full
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.
2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET CRD-02AD065N reference design features and benefits: Highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs Comfortably achieve Titanium standard by having > 98.5% efficiency while THD <
6.6kW High Power Density Bi-Directional EV On-Board Charger The CRD-06600FF065N is a demonstration of Wolfspeed's 650 V, 60 mOhm (C3M) SiC MOSFETs in a 6.6 kW Bi-Directional converter targeting high efficiency and high power density on-board charging applications. The demo board consists of a bi-directional totem pole PFC (AC/DC) stage and an isolated
200kW XM3 Three-Phase Inverter This 200kW three-phase inverter demonstrates best-in-class system-level power density and efficiency obtained by using Wolfspeed’s new XM3 power module platform. The XM3 power module platform is optimized for SiC MOSFETs in a high-density, low-inductance footprint, which reduces system-level losses and simplifies the overall system design. FEATURES INCLUDE: Enables over 2x
The need to increase switch mode power supply efficiency within data centers is never ending. This webinar will focus on server switch mode power supply technologies, and how silicon carbide (SiC) MOSFETs and Schottky diodes can improve efficiency, reduce system size/weight, and reduce overall complexity and costs when used in new bridgeless totem pole
John Palmour, CTO at Cree, sat down with Semiconductor Engineering to talk about silicon carbide, how it compares to silicon, what’s different from a design and packaging standpoint, and where it’s being used. What follows are excerpts of that conversation... Read More!
Designed for use with Cree’s High-Performance CGD12HBXMP and CGD15HB62LP Single-Ended Inputs for Interfacing with 3.3 V or 5 V Microcontrollers Differential Outputs for Increased Noise Immunity High-Frequency, Ultra-Fast Switching Operation Fault Indicator LEDs Reverse Polarity and Overvoltage Protections Enables Retrofitting Single-Ended Systems for Differential Signals LEARN MORE! ASK
The CRD3DD12P buck boost evaluation kit is optimized to demonstrate the high-speed switching capability of Wolfspeed’s 3rd Generation (C3M) silicon carbide (SiC) MOSFETs. The board features SMA connectors for monitoring the gate to source voltage. The SMA connectors offer much cleaner waveforms than traditional probes and ground leads. This evaluation kit supports 4-lead and 3-lead
1200 V, 425 A Silicon Carbide Switching-Loss Optimized XM3 Half-Bridge Module The CAB425M12XM3 is the newest addition to Wolfspeed's XM3 power module platform, developed to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module,