GaN & SiC Evaluation and Reference Products
Speed your time to market with GaN and SiC evaluation kits, reference designs and simulation tools
As power conversion applications rapidly transition to gallium nitride (GaN) and silicon carbide (SiC) technologies, Richardson RFPD can help you in your integration plans with our broad selection of GaN and SiC resources to help speed your time to market. Reference the links below for more details on our offering of GaN and SiC technology evaluation kits and reference designs. Also access our gate driver resources that help you address the uniqueness of the voltage requirements, faster switching speeds and high frequency presented by these technologies.
Featured GaN & SiC Evaluation and Reference Products
Wolfspeed: New SiC 3.6 kW Bridgeless Totem-Pole PFC Reference Design
Download Reference Design Files This reference design demonstrates the application
Wolfspeed 3.6 kW Bridgeless Totem-Pole PFC Reference Design
HIGH EFFICIENCY, HIGH POWER DENSITY DOCUMENTATION ONLYThis reference design demonstrates
NXP Half-bridge Eval Kit Designed to Connect with Wolfspeed’s XM3 SiC MOSFET Module
FRDMGD3160XM3EVM This is a half-bridge evaluation kit populated with
GaN Systems 3 kW High-efficiency Bridgeless Totem Pole PFC Reference Design
GS-EVB-BTP-3KW-GS: Using GaN E-HEMTs This 3kW reference design demonstrates the
150 kVA 3-phase SiC Power Stack Reference Design
from Mersen + Microchip The “electrification of everything” is driving
Plug-and-play gate driver board for 62mm, D3 and SP6 package SiC modules
In Stock: SiC Accelerated Development Kit - Digital Programmable Gate
Wolfspeed CRD-22DD12N Reference Design
Files available for download This reference design demonstrates the
GaN Systems 650 V Half-Bridge Bipolar Driver Switch Board
Supports high-power wireless charger, industrial and consumer applications The GS-EVB-HB-0650603B-HD