GaN & SiC Evaluation and Reference Products
Speed your time to market with GaN and SiC evaluation kits, reference designs and simulation tools
As power conversion applications rapidly transition to gallium nitride (GaN) and silicon carbide (SiC) technologies, Richardson RFPD can help you in your integration plans with our broad selection of GaN and SiC resources to help speed your time to market. Reference the links below for more details on our offering of GaN and SiC technology evaluation kits and reference designs. Also access our gate driver resources that help you address the uniqueness of the voltage requirements, faster switching speeds and high frequency presented by these technologies.
Featured GaN & SiC Evaluation and Reference Products
600kW 3-Phase Reference Design with 6 1200V, 450A SiC Half-bridge Modules
The 600kW three-phase inverter demonstrates system-level power density and
Download Reference Design Files: Wolfspeed 6.6 kW high-frequency, DC-DC converter
CRD-06600DD065N Reference Designs Demonstration of Wolfspeed’s 650 V, 60
GaN Systems: Full-Bridge GaN Module Driver Board
GS-EVB-FB-650V150A-SP1A: 650V 150A Full-Bridge Module Driver Board This GS-EVB-FB-650V150A-SP1A is
In Stock: SiC Accelerated Development Kit – Digital Programmable Gate Drivers
Augmented Switching™ Accelerated Development Kit, Digital Programmable Gate Drivers
New Evaluation Module: 650V 300A 3-Phase GaN Power Module
GS-EVM-3PH-650V300A-SM1 from GaN Systems This GS-EVM-3PH-650V300A-SM1 evaluation module is a
In Stock: NXP Half-bridge evaluation kit with single channel IGBT/SiC gate drive devices
FRDMGD3100HB8EVM FRDMGD3100HB8EVM is a half-bridge evaluation kit populated with two
Wolfspeed KIT-CRD-8FF90P Evaluation Platform
Evaluation Board for 900V SiC C3M™ MOSFET in a 7-pin
GaN Systems: GS-EVB-LLC-3KW-GS 3kW LLC Reference Design for Power Applications
3KW High Efficiency LLC Reference Design A high density, high