GaN & SiC Evaluation and Reference Products
Speed your time to market with GaN and SiC evaluation kits, reference designs and simulation tools
As power conversion applications rapidly transition to gallium nitride (GaN) and silicon carbide (SiC) technologies, Richardson RFPD can help you in your integration plans with our broad selection of GaN and SiC resources to help speed your time to market. Reference the links below for more details on our offering of GaN and SiC technology evaluation kits and reference designs. Also access our gate driver resources that help you address the uniqueness of the voltage requirements, faster switching speeds and high frequency presented by these technologies.
Featured GaN & SiC Evaluation and Reference Products
New Evaluation Module: 650V 300A 3-Phase GaN Power Module
GS-EVM-3PH-650V300A-SM1 from GaN Systems This GS-EVM-3PH-650V300A-SM1 evaluation module is a
In Stock: NXP Half-bridge evaluation kit with single channel IGBT/SiC gate drive devices
FRDMGD3100HB8EVM FRDMGD3100HB8EVM is a half-bridge evaluation kit populated with two
Wolfspeed KIT-CRD-8FF90P Evaluation Platform
Evaluation Board for 900V SiC C3M™ MOSFET in a 7-pin
GaN Systems: GS-EVB-LLC-3KW-GS 3kW LLC Reference Design for Power Applications
3KW High Efficiency LLC Reference Design A high density, high
GaN & SiC Technology Overview Brochure
May 2021 updated version! Richardson RFPD's expanded product selection
NXP’s GD3160 Half-Bridge Evaluation Kit
FRDMGD3160HBIEVM The FRDMGD3160HBIEVM is a half-bridge evaluation kit populated with
GaN Systems GS-EVM-CHG-100W: Charger Reference Design for Consumer Electronics
100W PFC QR USB PD Charger with 2 Type-C Ports
Analog Devices EVAL-ADuM4146: High Voltage, Isolated SiC Gate Driver Optimized for Use with Wolfspeed SiC MOSFETs & Power Modules
The EVAL-ADuM4146WHB1Z is a half bridge gate drive board