with Improved Robustness and Cost Performance

The new GaN transistors GS-065-060-3-B/T, available from Richardson RFPD, provide low RDS(on) (25 mΩ) and feature a 60A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield. Offered in GaNPX® package, GS-065-060-3-B/T feature an updated design.

The advantages of low cost, design flexibility, and improved performance meet new demands from wide-ranging applications, including AC/DC and DC/DC high power density power supply, bridgeless totem pole PFC, power inverters, industrial motor drives and wireless power transfer.


GS-065-060-3-B: Bottom-side cooled


GS-065-060-3-T: Top-side cooled

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Design support is available from Richardson RFPD engineers.