2022-09-05T11:18:08-05:00

Sun to Wheels: Powering a Renewable Future with Silicon Carbide

While research in new wind turbine designs and perovskite-based solar cells is pushing the limits of energy conversion efficiency, the power semiconductor chain between the generation to application of renewable energy need no longer be the weak link from the sun to the wheels. There are immense SWaP-C benefits available today from simply swapping out legacy semiconductor technology for SiC in energy connection, distribution, and storage systems…

2022-09-23T14:23:03-05:00

Wolfspeed 62mm BM3 Silicon Carbide Modules for High Frequency Industrial Applications

Wolfspeed’s BM3 power module platform provides the system benefits of SiC while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed SiC switching benefits and increased system efficiency, due to the low-inductance layout. The BM3 platform is a perfect fit for high frequency industrial applications such as induction heating, rail and traction, motor drives, and EV charging infrastructures…

2022-09-23T14:01:01-05:00

Webinar: Optimizing Drive Cycle Simulations For Automotive Applications

Wolfspeed automotive qualified products, like the EAB450M12XM3, are optimized for the traction inverter market. Designers simulating traction inverters require a balance of complexity, accuracy, and simulation time. Discover strategies and best practices for simulating inverters and automotive drive cycles during this webinar...

2022-06-06T18:04:08-05:00

Bodo’s Power – Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs. The desired reliability is often not possible without sacrificing efficiency, nor can silicon-based solutions meet today’s challenging size, weight and cost requirements. With the arrival of high-voltage silicon carbide (SiC) MOSFETs, however, designers now have an opportunity to improve performance while solving all the other challenges.

2022-05-30T17:59:13-05:00

EV Charging: Are You Prepared for Rapid Market Expansion?

Advances in power-delivering technologies continue to enable industries like Electric Vehicles (EVs) to improve across the board. This includes reliability, performance, cost, size and the user experience. This white paper focuses on the three EV charging levels and the Microchip solutions that can support several aspects of residential, commercial and fast charging systems. This includes a highlight of Microchip's low inductance SiC modules and digital programmable gate drivers enabling more efficient, compact and reliable DC fast chargers.

2022-09-01T18:15:53-05:00

Silicon Carbide-Based Circuit Breakers for High-Power DC Systems

Circuit breakers are one of the most common components used in a short-circuit and overcurrent protection circuit, especially for higher-power systems. There are many considerations for designing in this kind of protection, and this article will show why it’s important to build in the protection, advantages of SiC-based solid-state circuit breakers, reference designs/circuits, tips on designing for transient or surge immunity, and explanations of how SiC provides an edge over traditional silicon (Si) devices and other circuit-breaker technologies...

2022-04-12T10:38:56-05:00

Delivering on the EV Range Extension Promise of SiC in Traction Inverters

SiC MOSFETs are widely expected to add between 5% and 10% more range for a standard EV driving cycle as compared to existing silicon based technologies. Because of this, they are an important part of the next generation of traction inverters in the EV drive train. If properly exploited with supporting components, their power efficiency gain could represent a huge step forward in building consumer confidence in EV range and help to accelerate EV adoption…

2022-02-21T10:43:16-06:00

Using the ADuM4136 Isolated Gate Driver and LT3999 DC-to-DC Converter to Drive a 1200 V SiC Power Module

This application note demonstrates the advantages of the ADuM4136 gate driver, a single-channel device with an output drive capability of up to 4 A, a maximum common-mode transient immunity (CMTI) of 150 kV/μs, and fast fault management that includes desaturation protection.

2021-11-01T16:04:22-05:00

White Paper: Cut Down on Hours of Comparative Analysis with SpeedFit Design Simulator

This white paper reviews Wolfspeed's SpeedFit Design Simulator, an online PLECS-based, system-level circuit simulator intended for aiding in several key areas, such as device-to-device and topology comparisons, parallel design configurations, thermal management, and evaluating hardware performance.

2021-10-26T12:12:26-05:00

Wolfspeed Silicon Carbide Companion Guide

Pair Wolfspeed Silicon Carbide Power Devices with Compatible Gate Drivers from Analog Devices. Wolfspeed is the global leader in Silicon Carbide (SiC) wide bandgap semiconductor technology. Analog Devices (ADI) is the market leader in digital isolation. Together, Wolfpseed SiC devices and ADI isolated gate drivers enable more efficient, reliable, and cost effective power conversion designs.

2021-10-24T15:49:58-05:00

White Paper: The Value of Using Silicon Carbide in Energy Storage Systems

Whether using discretes or high-power modules, SiC has shown tremendous opportunity in energy storage applications from residential through industrial. Learn in this white paper how Wolfspeed’s portfolio/resources enable the most flexible, scalable, high-performance designs at a low cost and small footprint…

2021-10-16T16:35:15-05:00

White Paper: Deciphering Data Sheets

During the component selection process of hardware design, it’s typical to quickly review datasheets and user guides before committing to a specific chipset. However, depending on the application, it may benefit the designer to explore some of these features in greater detail. Download this white paper and learn how to “decipher” datasheets for Wolfspeed SiC MOSFETs and Schottky diodes, which have many important details that should not be overlooked...

2021-10-11T14:28:26-05:00

White Paper: Dynamic Characterization and Measurement Methods for SiC MOSFETs

With increased voltage ratings, lower operating temperatures, higher-current capabilities, and better recovery characteristics, silicon carbide (SiC) has enabled several applications to maximize efficiency and power density while keeping costs at a minimum; however, it’s important to fully characterize these components and their performance in order to take full advantage of SiC technology.

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