Microchip’s SiC MOSFETs are in TO-247 4-lead packages. These packages provide access to the Kelvin source, which is wire bonded directly to the die, bypassing the effect of di/dt in the source inductance. This provides greater control over the SiC MOSFET, especially during fast, high-current transient conditions.
The circuit layout includes slots and sufficient creepage distance to accommodate both 700V and 1200V SiC MOSFETs. Depending on the target voltage and current rating, you can populate the high-voltage auxiliary E-Fuse design with the devices as shown in the table below.