Next Generation 700V SiC MOSFETs

Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature at 175 degrees Celsius
  • Fast and reliable body diode
  • Superior avalanche ruggedness

Benefits

  • High efficiency with lower switching losses
  • Simple to drive and easy to parallel
  • Improved thermal capabilities to 175 degrees Celsius junction temperature
  • Eliminates need for external freewheeling diode
  • Lower system cost (smaller magnetics/heat sinks, fewer components, reduced system size)

Applications

  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid electric vehicle (HEV)/electric vehicle (EV) powertrain and charging
  • Power supply and distribution

 

Item Voltage Current Rds(on) Package Type
MSC015SMA070B4 700 140 15 TO-247-4
MSC015SMA070B 700 93 15 TO-247
MSC015SMA070S 700 89 15 D3PAK
MSC035SMA070B 700 52 35 TO-247
MSC035SMA070S 700 46 35 D3PAK
MSC060SMA070B4 700 39 60 TO-247-4
MSC060SMA070B 700 28 60 TO-247
MSC060SMA070S 700 26 60 D3PAK
MSC090SMA070B 700 19 90 TO-247
MSC090SMA070S 700 18 90 D3PAK