View Larger Image Application Note: Gate Driver Circuit Design with GaN E-HEMTsadmin2022-06-13T11:39:32-05:00 Application Note: Gate Driver Circuit Design with GaN E-HEMTsThis GaN Systems application note shows why GaN HEMTs are simple to drive. (March 2022 updated version.) Download Now Share This Story, Choose Your Platform! FacebookTwitterLinkedInEmail Related Projects Designing Robust Transistor Circuits with IGBTs and Silicon Carbide MOSFETs Designing Robust Transistor Circuits with IGBTs and Silicon Carbide MOSFETs September 23rd, 2022 | 0 Comments Application Note: Driving Microchip SiC MOSFETs Application Note: Driving Microchip SiC MOSFETs July 24th, 2022 | 0 Comments Using the ADuM4136 Isolated Gate Driver and LT3999 DC-to-DC Converter to Drive a 1200 V SiC Power Module Using the ADuM4136 Isolated Gate Driver and LT3999 DC-to-DC Converter to Drive a 1200 V SiC Power Module February 21st, 2022 | 0 Comments White Paper: Gate Drives and Gate Driving with SiC MOSFETs White Paper: Gate Drives and Gate Driving with SiC MOSFETs September 1st, 2021 | 0 Comments Video: Verified SiC Converter Solution from Gate Driver to Power MOSFET Video: Verified SiC Converter Solution from Gate Driver to Power MOSFET March 23rd, 2021 | 0 Comments Application Note: Characterization of a 62mm SiC Power Module with AgileSwitch Augmented Switching Gate Drivers Application Note: Characterization of a 62mm SiC Power Module with AgileSwitch Augmented Switching Gate Drivers February 7th, 2021 | 0 Comments Leave A Comment Cancel replyComment
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