White Paper: Dynamic Characterization and Measurement Methods for SiC MOSFETsadmin2021-10-11T14:28:26-05:00
White Paper: Dynamic Characterization and Measurement Methods for SiC MOSFETs
With increased voltage ratings, lower operating temperatures, higher-current capabilities, and better recovery characteristics, silicon carbide (SiC) has enabled several applications to maximize efficiency and power density while keeping costs at a minimum; however, it’s important to fully characterize these components and their performance in order to take full advantage of SiC technology.
Download this white paper to learn how Wolfspeed’s SiC MOSFET clamped inductive load (CIL) test system can help you accurately model your design and take full advantage of SiC’s benefits…
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