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Bodo’s Power – Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs


Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs. The desired reliability is often not possible without sacrificing efficiency, nor can silicon-based solutions meet today’s challenging size, weight and cost requirements. With the arrival of high-voltage silicon carbide (SiC) MOSFETs, however, designers now have an opportunity to improve performance while solving all the other challenges.

White Paper: Cut Down on Hours of Comparative Analysis with SpeedFit Design Simulator


This white paper reviews Wolfspeed's SpeedFit Design Simulator, an online PLECS-based, system-level circuit simulator intended for aiding in several key areas, such as device-to-device and topology comparisons, parallel design configurations, thermal management, and evaluating hardware performance.

Wolfspeed Silicon Carbide Companion Guide


Pair Wolfspeed Silicon Carbide Power Devices with Compatible Gate Drivers from Analog Devices. Wolfspeed is the global leader in Silicon Carbide (SiC) wide bandgap semiconductor technology. Analog Devices (ADI) is the market leader in digital isolation. Together, Wolfpseed SiC devices and ADI isolated gate drivers enable more efficient, reliable, and cost effective power conversion designs.

White Paper: The Value of Using Silicon Carbide in Energy Storage Systems


Whether using discretes or high-power modules, SiC has shown tremendous opportunity in energy storage applications from residential through industrial. Learn in this white paper how Wolfspeed’s portfolio/resources enable the most flexible, scalable, high-performance designs at a low cost and small footprint…

White Paper: Deciphering Data Sheets


During the component selection process of hardware design, it’s typical to quickly review datasheets and user guides before committing to a specific chipset. However, depending on the application, it may benefit the designer to explore some of these features in greater detail. Download this white paper and learn how to “decipher” datasheets for Wolfspeed SiC MOSFETs and Schottky diodes, which have many important details that should not be overlooked...

White Paper: Dynamic Characterization and Measurement Methods for SiC MOSFETs


With increased voltage ratings, lower operating temperatures, higher-current capabilities, and better recovery characteristics, silicon carbide (SiC) has enabled several applications to maximize efficiency and power density while keeping costs at a minimum; however, it’s important to fully characterize these components and their performance in order to take full advantage of SiC technology.

White Paper: Designing for Scalability in High-Power Applications


The Wolfspeed SiC product portfolio includes discrete components ranging from 650 V to 1700 V that provide flexibility and low-cost, multi-source solutions, and the WolfPACK family of press-fit, baseplate-less designs that offer industry-standard, mid-range power options -- enabling designers to scale power appropriate to their application and optimize power density, design simplicity, system costs, and reliability…

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