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GaN Systems: Demystifying the GaN EMC Design Practice

Mitigating EMC in GaN power circuits does not require extra design efforts. In fact, the EMC performance and solutions of GaN are very similar to silicon MOSFETs. Learn more in this Tech Chat with GaN Systems.

Wolfspeed: SiC Optimized Packaging – The Advantage of the Kelvin Source Pin

Design engineers can realize the extended benefits of SiC with the simple implementation of a 4-lead, TO-247 package device. Learn more in this Tech Chat.

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Analog Devices: Common Mode Transient Immunity

Commode Mode Transient Immunity as it relates to gate drivers is explained in this Tech Chat as well as the minimum gate driver CMTI required for converters integrated with Gallium Nitride (GaN) or Silicon Carbide (SiC) power semiconductors. CM Transients can affect gate driver timing and performance. Incorrect gate signals cause converter misbehavior and/or failure. Selecting the right gate driver with sufficiently high CMTI means better performance for GaN or SiC converters.

Analog Devices: Common Mode Transient Immunity Testing for Gate Drivers

Analog Devices reviews its test set-up and procedures to measure the common mode transient immunity of its isolated gate drivers and their comparison against competitive solutions.

Analog Devices: Why Gate Driver Drive Strength is Essential

Gate drivers are required for voltage level shifting, charging and discharging the system and drive strength to charge and discharge quickly. In this Tech Chat, we discuss why gate drive strength is essential to supporting the faster switching of Gallium Nitride (GaN) and Silicon Carbide (SiC) for lower losses and how you can equate the gate driver strength to a datasheet’s identification of the peak current and Rds(on) within a system.

Analog Devices: Drive Voltages for GaN and SiC Unipolar and Bipolar Gate Drivers

This Tech Chat addresses the different gate drive levels required for optimal performance of Silicon (Si), Gallium Nitride (GaN) and Silicon Carbide (SiC) technologies. In addition, we discuss the difference between unipolar and bipolar gate drivers and how their configurations vary.

Analog Devices: Short Circuit Protection Using Isolated Gate Drivers

Gate drivers provide the first line of defense against short-circuit faults on power semiconductor devices. When comparing different types of power semiconductor technologies – IGBTs v. silicon carbide, for example – there are differences in the short circuit withstand capabilities. This Tech Chat discusses reasons for SiC module failure and how a gate driver’s fast fault detection and protection can improve reliability of a SiC device.

Analog Devices: Gate drivers optimized for fast-switching power semiconductor technologies

The use of Gallium Nitride (GaN) and Silicon Carbide (SiC) is increasing rapidly in many power conversion applications, but not all gate drivers are well matched for these technologies. Learn in this Tech Chat the key characteristics of gate drivers optimized for these fast-switching technologies.

GaN Systems: Demystifying the GaN EMC Design Practice

Mitigating EMC in GaN power circuits does not require extra design efforts. In fact, the EMC performance and solutions of GaN are very similar to silicon MOSFETs. Learn more in this Tech Chat with GaN Systems.

GaN Systems: E-Mode Technology Benefits

GaN Systems’ Enhancement-Mode Gallium Nitride (GaN) technology is often compared to other GaN technologies, such as cascode. In this Tech Chat, we discuss how GaN Systems differentiates itself from other normally off GaN technologies to achieve lower losses, simplified use at higher power levels and proven reliability.

GaN Systems: Thermal Characterization of E-HEMTs

Just how easy is it to characterize the junction temperature of GaN Systems devices? In this Tech Chat, temperature measurement using Long-wave Infrared (LWIR) cameras is discussed.

Wolfspeed: Benefits of SiC MOSFETs v. Competing Technologies

In this Tech Chat we tackle the question often asked on how Silicon Carbide (SiC) compares versus competing technologies such as Silicon (Si) and Gallium Nitride (GaN). Also highlighted are the Automotive, Energy and Industrial applications that have adopted SiC due to its high power density, high temperature and high efficiency benefits.

Wolfspeed: SiC Optimized Packaging – The Advantage of the Kelvin Source Pin

Design engineers can realize the extended benefits of SiC with the simple implementation of a 4-lead, TO-247 package device. Learn more in this Tech Chat.

Wolfspeed: SiC Reliability

With many power designers focusing on silicon carbide device level qualification, reliability and consistency of supply, we delve into how Wolfspeed emphasizes the differences between reliability versus qualification testing and how this translates into assurances that the unprecedented market demand for SiC can be realized throughout the next decade and beyond.

Wolfspeed: Switching Frequency

In this Tech Chat, we discuss how can power designers determine the optimal or maximum switching frequency for a given device and what can be done with a SiC device design to reduce switching losses even further.

Wolfspeed: Understanding Operational and Maximum Gate Drive Levels for SiC MOSFETs

Why negative gate driving voltage? In this Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs – how adding negative gate bias improves noise immunity, avoiding false turn-on in a half bridge configuration and the recommendation to use negative voltage for a Totem Pole half bridge topology due to cross-talk.

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