Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion

Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.

Key features

  • Low on-state resistance over temperature

  • Low parasitic capacitances

  • Fast diode with ultra-low reverse recovery

  • High temperature operation (TJ = 175 °C)

  • Kelvin source pin

  • Industry standard through-hold & SMT packages

Key benefits

  • Improves system efficiency with lower switching and conduction losses

  • Enables high switching frequency operation

  • Improves system level power density

  • Reduces system size, weight and cooling requirements

  • Enables new hard switching topologies (Totem-Pole PFC)

  • Wolfspeed 650V MOSFETs
  • Enabling Highest System Efficiency
  • Lowest On-Resistance Increase vs. Temperature
  • Wolfspeed 650V MOSFETs
Part Number Blocking Voltage (V) RDS(on)(mΩ) (ID) @ 25°C (A) Package Samples
C3M0015065K 650 15 mΩ 120 TO-247-4 Request Sample!
C3M0015065D 650 15 mΩ 120 TO-247-3 Request Sample!
C3M0060065K 650 60 mΩ 37 TO-247-4 Request Sample!
C3M0060065D 650 60 mΩ 37 TO-247-3 Request Sample!
C3M0060065J 650 60 mΩ 37 TO-263-7 Request Sample!

Wolfspeed 650V MOSFETs:
Associated Products

C5D50065D

50A, 650V SiC Schottky Diode
TO-247-3 Package

Pairing Wolfspeed SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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ADUM4121-1CRIZ

High-voltage, Isolated Gate Driver
with internal Miller clamp
2A output, 11.3V UVLO

The ADuM4121-1CRIZ is a 2A isolated, single-channel driver employing Analog Devices’ iCoupler® technology to provide precision isolation.

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650V SiC Schottky Diodes

6th Generation

The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of conduction losses, which further enable extremely high system level efficiency and power density in the most demanding power conversion applications.

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KIT-CRD-3DD065P

Evaluation Product

Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M) 650 V SiC MOSFETs and 6th Generation (C6D) 650 V SiC Schottky diodes.

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CRD-06600FF065N

6.6 kW High Power Density Bi-Directional EV On-Board Charger

The demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC stage based on a CLLC topology with quasi-constant DC link voltage.

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CRD-02AD065N

2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET

Reference design offers a highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs.

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CRD-06600DD065N

6.6 kW High Frequency DC-DC Converter

The demo board consist of a DC-DC LLC topology in which primary side is based on a Full bridge stage while the secondary side is based on an asynchronous rectification stage.

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