Maximize the performance benefits of SiC with a robust, simple and cost-effective module & system layout.
Platform Benefits
High Power Density Footprint
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
- Implements Third Generation MOSFET Technology
- Initial Product Releases: Optimized for Low Conduction-Loss & High-Frequency Operation
Future Derivative Configurations: Up to 1.7 kV, Spanning Multiple Topologies
Targeted Applications
- Motor & Traction Drives
- UPS
- EV Chargers
Technical Features
- Terminal Layout Simplifies Bus Bar Design
- Integrated Temperature Sensing
- Dedicated Drain-Kelvin Pin
- Silicon Nitride Insulator and Copper Baseplate

Part Number | Blocking Voltage (V) | Current (A) | Rds (on) (mOhm) | Footprint | Features |
---|---|---|---|---|---|
CAB450M12XM3 | 1200 | 450 | 2.6 | Optimized XM3 | Conduction-Optimized, Third Generation MOSFETs |
CAB425M12XM3 | 1200 | 425 | 3.2 | Optimized XM3 | Switching-Loss Optimized, Third Generation MOSFETs |
CAB400M12XM3 | 1200 | 400 | 4.0 | Optimized XM3 | Switching-Loss Optimized, Third Generation MOSFETs |
XM3 Evaluation Tools & Associated Products:
Support Rapid SiC System Evaluation
Optimized for Wolfspeed’s XM3 Half Bridge SiC Modules