Maximize the performance benefits of SiC with a robust, simple and cost-effective module & system layout.
Platform Benefits
High Power Density Footprint
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
- Implements Third Generation MOSFET Technology
- Initial Product Releases: Optimized for Low Conduction-Loss & High-Frequency Operation
Future Derivative Configurations: Up to 1.7 kV, Spanning Multiple Topologies
Targeted Applications
- Motor & Traction Drives
- UPS
- EV Chargers
Technical Features
- Terminal Layout Simplifies Bus Bar Design
- Integrated Temperature Sensing
- Dedicated Drain-Kelvin Pin
- Silicon Nitride Insulator and Copper Baseplate
| Part Number | Blocking Voltage (V) | Current (A) | Rds (on) (mOhm) | Footprint | Features |
|---|---|---|---|---|---|
| CAB450M12XM3 | 1200 | 450 | 2.6 | Optimized XM3 | Conduction-Optimized, Third Generation MOSFETs |
| CAB425M12XM3 | 1200 | 425 | 3.2 | Optimized XM3 | Switching-Loss Optimized, Third Generation MOSFETs |
| CAB400M12XM3 | 1200 | 400 | 4.0 | Optimized XM3 | Switching-Loss Optimized, Third Generation MOSFETs |
XM3 Evaluation Tools & Associated Products:
Support Rapid SiC System Evaluation
Optimized for Wolfspeed’s XM3 Half Bridge SiC Modules
200kW XM3 Three-Phase Inverter
- Enables over 2x the power density of comparable Si based designs and >98% efficiency
- Switching frequency is set by the user, up to 80 kHz
- Uses the CAB400M12XM3 Module and CGD12HBXMP Gate Driver
250kW XM3 Three-Phase Inverter
- Enables over 2x the power density of comparable Si based designs and >98% efficiency
- Switching frequency is set by the user, up to 80 kHz
- Uses the CAB425M12XM3 Module and CGD12HBXMP Gate Driver
Inverter Reference Design
- 250-300 kW Output Power, depending on the XM3 Module Implemented
- Demonstrates best-in-class system-level power density and efficiency obtained by using Wolfspeed’s new XM3 power module platform
- Enables over 2x the power density of comparable Si based designs and >98% efficiency
- Includes XM3 Power Modules, CGD12HBXMP Gate Drivers, High Performance Cold Plate, Optimized Laminated Bussing for Reduced Power Loop Inductance, DC-Link Capacitors, Sensors and Control Hardware
3000 Series Coldplate
- Aluminum friction stir welded coldplate
- Optimized for high heat flux of SiC
- MDT™ (micro deformation technology) allows for very low thermal resistance, low pressure drop and balanced parallel flow
- 20 fin/inch
- MDT in-line pin fin (~0.5mm gaps, best performance, higher pressure drop)
XM3 Gate Driver
- Up to 80 kHz Switching Frequency
- Replaceable, Easy-Access Turn-On and Turn-Off Gate Resistors
- Overcurrent, Shoot-Through and Reverse Polarity Protection
- 100 kV/µs Common-Mode Transient Immunity (CMTI)
- 1000 Vrms Isolation (Working Voltage) and 5 kV Peak Isolation for 1 Minute
- Differential Inputs for Increased Noise Immunity
- Fault and Power LED Indicator
Differential Transceiver
- Converts Single-Ended I/O to High Noise Immunity Differential I/O
- Supports Single-Ended 3.3 V or 5.0 V Logic-Level Inputs
- Integrated Reverse Polarity and Overvoltage Protections
- Fault Indicator LEDs for Instant Visual Feedback
- Single-Ended and Differential Filter Networks for Additional EMC/EMI Immunity
XM3 Half-bridge Module Dynamic Evaluation Board
- Accurately measures the voltage and current waveforms of the CAB450M12XM3 under an inductive load switching event
- Enables the calculation of switching loss energies under precise test conditions to dynamically evaluate the module and facilitate in-module comparisons and power electronics systems design